Research

gallium nitride materials and devices, advanced electron microscopy, high-temperature aerospace materials, Graphene

Research Interests

Research Overview

My research is broad and covers three main areas: gallium nitride materials and devices; advanced electron microscopy; and high-temperature aerospace materials.

Gallium-nitride materials and devices

Gallium nitride (GaN) is probably the most important semiconductor material since silicon. It emits brilliant light as well as being a key material for next-generation transistors.  

Advanced electron microscopy and analysis

We are developing and applying a range of advanced electron microscopy techniques. For example, we have pioneered energy-filtered secondary-electron imaging in scanning electron microscopy for the mapping of dopants in silicon and other semiconductor devices.  

High-temperature aerospace materials

We are designing and developing higher-temperature advanced alloys that will improve the efficiency of gas-turbine engines, resulting in reduced fuel consumption and reduced emissions.

Publications of specific relevance to Materials Research

Publications

2021

• Sun YW, Papageorgiou D, Puech P, Proctor JE, Machon D, Bousige C, San-Miguel A, Humphreys C and Dunstan DJ (2021). Mechanical Properties of Graphene. Aip Publishing  Applied Physics Reviews  10.1063/5.0040578
• Sun YW, Holec D, Gehringer D, Fenwick O, Dunstan DJ and Humphreys CJ (2021). Erratum: Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers [Phys. Rev. B 101, 125421 (2020)]. Physical Review B  vol. 103, (11) 119901-119901. 10.1103/physrevb.103.119901
• Pristovsek M, Frentrup M, Zhu T, Kusch G and Humphreys CJ (2021). X-ray characterisation of the basal stacking fault densities of (11-22) GaN. Crystengcomm  10.1039/d1ce00627d

2020

• Sun Y, Passaretti P, Hernandez I, Gonzalez J, Rodriguez F, Liu W, Dunstan DJ, Oppenheimer PG and Humphreys CJ (2020). Nanomechanics of Graphene Oxide-bacteriophage based Self-assembled Porous Composites. Nature Publishing Group  Scientific Reports  vol. 10, 10.1038/s41598-020-72372-1
• Zhang J, Guo Q, Li X, Li C, Wu K, Abrahams I, Yan H, Knight MM, Humphreys CJ and Su L (2020). Solution-Processed Epitaxial Growth of Arbitrary Surface Nanopatterns on Hybrid Perovskite Monocrystalline Thin Films. American Chemical Society  Acs Nano  10.1021/acsnano.9b08553
• Niranjan S, Guiney I, Humphreys CJ, Sen P, Muralidharan R and Nath DN (2020). Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme. Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics  vol. 38, (3) 10.1116/1.5144509
• Remesh N, Kumar S, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R and Nath DN (2020). A Novel Technique to Investigate the Role of Traps in the Off-State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias. Physica Status Solidi (a) Applications and Materials Science  vol. 217, (7) 10.1002/pssa.201900794
• Sun Y, Holec D, Gehringer D, Fenwick O, Dunstan D and Humphreys C (2020). Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers. American Physical Society  Physical Review B: Condensed Matter and Materials Physics  vol. 101, 10.1103/PhysRevB.101.125421

2019

• Griffiths JT, Wisnivesky Rocca Rivarola F, Davis NJLK, Ahumada-Lazo R, Alanis JA, Parkinson P, Binks DJ, Fu WY, De La Pena F, Price MB, Howkins A, Boyd I, Humphreys CJ, Greenham NC and Ducati C (2019). Effect of Size on the Luminescent Efficiency of Perovskite Nanocrystals. Acs Applied Energy Materials  vol. 2, (10) 6998-7004. 10.1021/acsaem.8b02132
• Zhou B, Das A, Kappers M, Oliver R, Humphreys C and Krause S (2019). InGaN as a substrate for AC photoelectrochemical imaging. Mdpi  Sensors  10.3390/s19204386
• Sun YW, Liu W, Hernandez I, Gonzalez J, Rodriguez F, Dunstan DJ and Humphreys C (2019). 3D strain in 2D materials: to what extent is monolayer graphene graphite? American Physical Society  Physical Review Letters  vol. 123, 135501-135501. 10.1103/PhysRevLett.123.135501
• Tang F, Zhu T, Fu WY, Oehler F, Zhang S, Griffiths JT, Humphreys C, Martin TL, Bagot PAJ, Moody MP, Patra SK, Schulz S, Dawson P, Church S, Jacobs J and Oliver RA (2019). Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m -plane freestanding GaN substrates. Journal of Applied Physics  vol. 125, (22) 10.1063/1.5097411
• Massabuau FCP, Horton MK, Pearce E, Hammersley S, Chen P, Zielinski MS, Weatherley TFK, Divitini G, Edwards PR, Kappers MJ, McAleese C, Moram MA, Humphreys CJ, Dawson P and Oliver RA (2019). Optical and structural properties of dislocations in InGaN. Journal of Applied Physics  vol. 125, (16) 10.1063/1.5084330
• Christian GM, Schulz S, Hammersley S, Kappers MJ, Frentrup M, Humphreys CJ, Oliver RA and Dawson P (2019). Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength. Japanese Journal of Applied Physics  vol. 58, 10.7567/1347-4065/ab0407
• Qadir A, Sun YW, Liu W, Oppenheimer PG, Xu Y, Humphreys CJ and Dunstan DJ (2019). Effect of humidity on the interlayer interaction of bilayer graphene. Physical Review B  vol. 99, (4) 10.1103/PhysRevB.99.045402
• Remesh N, Mohan N, Kumar S, Prabhu S, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R and Nath DN (2019). Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model. Ieee Transactions On Electron Devices  vol. 66, (1) 613-618. 10.1109/TED.2018.2882533

2018

• Halsall MP, Crowe IF, Mullins J, Oliver RA, Kappers MJ and Humphreys CJ (2018). Photomodulated Reflectivity Measurement of Free-Carrier Dynamics in InGaN/GaN Quantum Wells. Acs Photonics  vol. 5, (11) 4437-4446. 10.1021/acsphotonics.8b00904
• Robin Y, Pristovsek M, Amano H, Oehler F, Oliver RA and Humphreys CJ (2018). What is red? on the chromaticity of orange-red InGaN/GaN based LEDs. Journal of Applied Physics  vol. 124, (18) 10.1063/1.5047240
• Christian GM, Schulz S, Kappers MJ, Humphreys CJ, Oliver RA and Dawson P (2018). Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities. Physical Review B  vol. 98, (15) 10.1103/PhysRevB.98.155301
• Christian G, Kappers M, Massabuau F, Humphreys C, Oliver R and Dawson P (2018). Effects of a Si-doped InGaN underlayer on the optical properties of InGaN/GaN quantum well structures with different numbers of quantum wells. Materials  vol. 11, (9) 10.3390/ma11091736
• Lee LY, Frentrup M, Kappers MJ, Oliver RA, Humphreys CJ and Wallis DJ (2018). Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN. Journal of Applied Physics  vol. 124, (10) 10.1063/1.5046801
• Choi FS, Griffiths JT, Ren C, Lee KB, Zaidi ZH, Houston PA, Guiney I, Humphreys CJ, Oliver RA and Wallis DJ (2018). Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers. Journal of Applied Physics  vol. 124, (5) 10.1063/1.5027680
• Humphreys CJ, Massabuau FC-P, Rhode SL, Horton MK, O¿Hanlon TJ, Kovacs A, Zielinski MS, Kappers MJ, Dunin-Borkowski RE and Oliver RA (2018). Atomic Resolution Imaging of Dislocations in AlGaN and the Efficiency of UV LEDs. Microscopy and Microanalysis  vol. 24, (S1) 4-5. 10.1017/s143192761800051x
• Humphreys C and Waddington G (2018). Response to letter from Wayne Osborn. Astronomy and Geophysics  vol. 59, (4)
• Cho SJ, Li X, Guiney I, Floros K, Hemakumara D, Wallis DJ, Humphreys C and Thayne IG (2018). Impact of stress in ICP-CVD SiNx passivation films on the leakage current in AlGaN/GaN HEMTs. Electronics Letters  vol. 54, (15) 947-949. 10.1049/el.2018.1097
• Zaidi ZH, Lee KB, Roberts JW, Guiney I, Qian H, Jiang S, Cheong JS, Li P, Wallis DJ, Humphreys CJ, Chalker PR and Houston PA (2018). Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. Journal of Applied Physics  vol. 123, (18) 10.1063/1.5027822
• Church SA, Hammersley S, Mitchell PW, Kappers MJ, Lee LY, Massabuau F, Sahonta SL, Frentrup M, Shaw LJ, Wallis DJ, Humphreys CJ, Oliver RA, Binks DJ and Dawson P (2018). Effect of stacking faults on the photoluminescence spectrum of zincblende GaN. Journal of Applied Physics  vol. 123, (18) 10.1063/1.5026267
• Blenkhorn WE, Schulz S, Tanner DSP, Oliver RA, Kappers MJ, Humphreys CJ and Dawson P (2018). Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures. Journal of Physics Condensed Matter  vol. 30, (17) 10.1088/1361-648X/aab818
• Humphreys C and Waddington G (2018). Illuminating theory on early solar eclipse. Astronomy and Geophysics  vol. 59, (1)
• Tang F, Lee KB, Guiney I, Frentrup M, Barnard JS, Divitini G, Zaidi ZH, Martin TL, Bagot PA, Moody MP, Humphreys CJ, Houston PA, Oliver RA and Wallis DJ (2018). Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors. Journal of Applied Physics  vol. 123, (2) 10.1063/1.5006255
• Kazemian P, Schönjahn C and Humphreys CJ (2018). Quantitative doping contrast profiling of p-n junctions in Si with the scanning electron microscope. Microscopy of Semiconducting Materials 2003  10.1201/9781351074636

2017

• Hopkins MA, Allsopp DWE, Kappers MJ, Oliver RA and Humphreys CJ (2017). The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes. Journal of Applied Physics  vol. 122, (23) 10.1063/1.4986434
• Kumar S, Gupta P, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R and Nath DN (2017). Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon with Carbon-Doped Buffer. Ieee Transactions On Electron Devices  vol. 64, (12) 4868-4874. 10.1109/TED.2017.2757516
• Jiang S, Lee KB, Guiney I, Miaja PF, Zaidi ZH, Qian H, Wallis DJ, Forsyth AJ, Humphreys CJ and Houston PA (2017). All-GaN-Integrated Cascode Heterojunction Field Effect Transistors. Ieee Transactions On Power Electronics  vol. 32, (11) 8743-8750. 10.1109/TPEL.2016.2643499
• Humphreys C and Waddington G (2017). Solar eclipse of 1207 BC helps to date pharaohs. Astronomy and Geophysics  vol. 58, (5) 5.39-5.42. 10.1093/astrogeo/atx178
• Rouet-Leduc B, Hulbert C, Lubbers N, Barros K, Humphreys CJ and Johnson PA (2017). Machine Learning Predicts Laboratory Earthquakes. Geophysical Research Letters  vol. 44, (18) 9276-9282. 10.1002/2017GL074677
• Frentrup M, Lee LY, Sahonta SL, Kappers MJ, Massabuau F, Gupta P, Oliver RA, Humphreys CJ and Wallis DJ (2017). X-ray diffraction analysis of cubic zincblende III-nitrides. Journal of Physics D: Applied Physics  vol. 50, (43) 10.1088/1361-6463/aa865e
• (2017). Dislocations in AlGaN: Core structure, atom segregation, and optical properties. Nano Letters  vol. 17, (8) 4846-4852. 10.1021/acs.nanolett.7b01697
• Rouet-Leduc B, Hulbert C, Barros K, Lookman T and Humphreys CJ (2017). Automatized convergence of optoelectronic simulations using active machine learning. Applied Physics Letters  vol. 111, (4) 10.1063/1.4996233
• Humphreys CJ, Griffiths JT, Tang F, Oehler F, Findlay SD, Zheng C, Etheridge J, Martin TL, Bagot PAJ, Moody MP, Sutherland D, Dawson P, Schulz S, Zhang S, Fu WY, Zhu T, Kappers MJ and Oliver RA (2017). The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem. Ultramicroscopy  vol. 176, 93-98. 10.1016/j.ultramic.2017.01.019
• Griffiths JT, Ren CX, Coulon PM, Le Boulbar ED, Bryce CG, Girgel I, Howkins A, Boyd I, Martin RW, Allsopp DWE, Shields PA, Humphreys CJ and Oliver RA (2017). Structural impact on the nanoscale optical properties of InGaN core-shell nanorods. Applied Physics Letters  vol. 110, (17) 10.1063/1.4982594
• Coulon PM, Vajargah SH, Bao A, Edwards PR, Le Boulbar ED, Girgel I, Martin RW, Humphreys CJ, Oliver RA, Allsopp DWE and Shields PA (2017). Evolution of the m-Plane quantum well morphology and composition within a GaN/InGaN core-shell structure. Crystal Growth and Design  vol. 17, (2) 474-482. 10.1021/acs.cgd.6b01281
• Qian H, Lee KB, Vajargah SH, Novikov SV, Guiney I, Zaidi ZH, Jiang S, Wallis DJ, Foxon CT, Humphreys CJ and Houston PA (2017). Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth. Journal of Crystal Growth  vol. 459, 185-188. 10.1016/j.jcrysgro.2016.12.025
• Kim JY, Ionescu A, Mansell R, Farrer I, Oehler F, Kinane CJ, Cooper JFK, Steinke NJ, Langridge S, Stankiewicz R, Humphreys CJ, Cowburn RP, Holmes SN and Barnes CHW (2017). Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001). Journal of Applied Physics  vol. 121, (4) 10.1063/1.4973956
• (2017). Carrier localization in the vicinity of dislocations in InGaN. Journal of Applied Physics  vol. 121, (1) 10.1063/1.4973278
• Smeeton T and Humphreys C (2017). Perspectives on electronic and photonic materials. Springer Handbooks  10.1007/978-3-319-48933-9_1

2016

• Novikov SV, Staddon CR, Sahonta SL, Oliver RA, Humphreys CJ and Foxon CT (2016). Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source. Journal of Crystal Growth  vol. 456, 151-154. 10.1016/j.jcrysgro.2016.07.038
• Zhu T, Gachet D, Tang F, Fu WY, Oehler F, Kappers MJ, Dawson P, Humphreys CJ and Oliver RA (2016). Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence. Applied Physics Letters  vol. 109, (23) 10.1063/1.4971366
• Hibberd MT, Frey V, Spencer BF, Mitchell PW, Dawson P, Kappers MJ, Oliver RA, Humphreys CJ and Graham DM (2016). Dielectric response of wurtzite gallium nitride in the terahertz frequency range. Solid State Communications  vol. 247, 68-71. 10.1016/j.ssc.2016.08.017
• (2016). Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m -plane InGaN/GaN quantum wells. Applied Physics Letters  vol. 109, (22) 10.1063/1.4968591
• Kundys D, Sutherland D, Davies MJ, Oehler F, Griffiths J, Dawson P, Kappers MJ, Humphreys CJ, Schulz S, Tang F and Oliver RA (2016). A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates. Sci Technol Adv Mater  vol. 17, (1) 736-743. 10.1080/14686996.2016.1244474
• Griffiths JT, Zhang S, Lhuillier J, Zhu D, Fu WY, Howkins A, Boyd I, Stowe D, Wallis DJ, Humphreys CJ and Oliver RA (2016). Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold. Journal of Applied Physics  vol. 120, (16) 10.1063/1.4965989
• Hocker M, Maier P, Jerg L, Tischer I, Neusser G, Kranz C, Pristovsek M, Humphreys CJ, Leute RAR, Heinz D, Rettig O, Scholz F and Thonke K (2016). Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence. Journal of Applied Physics  vol. 120, (8) 10.1063/1.4961417
• Muhammed MM, Roldan MA, Yamashita Y, Sahonta SL, Ajia IA, Iizuka K, Kuramata A, Humphreys CJ and Roqan IS (2016). High-quality III-nitride films on conductive, transparent (201)-oriented β-Ga2O3 using a GaN buffer layer. Scientific Reports  vol. 6, 10.1038/srep29747
• Pristovsek M, Han Y, Zhu T, Oehler F, Tang F, Oliver RA, Humphreys CJ, Tytko D, Choi PP, Raabe D, Brunner F and Weyers M (2016). Structural and optical properties of (1122) InGaN quantum wells compared to (0001) and (1120). Semiconductor Science and Technology  vol. 31, (8) 10.1088/0268-1242/31/8/085007
• Presa S, Maaskant PP, Kappers MJ, Humphreys CJ and Corbett B (2016). Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodes. Aip Advances  vol. 6, (7) 10.1063/1.4959100
• Davies MJ, Dawson P, Hammersley S, Zhu T, Kappers MJ, Humphreys CJ and Oliver RA (2016). Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells. Applied Physics Letters  vol. 108, (25) 10.1063/1.4954236
• Spencer BF, Smith WF, Hibberd MT, Dawson P, Beck M, Bartels A, Guiney I, Humphreys CJ and Graham DM (2016). Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique. Applied Physics Letters  vol. 108, (21) 10.1063/1.4948582
• Dawson P, Schulz S, Oliver RA, Kappers MJ and Humphreys CJ (2016). The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells. Journal of Applied Physics  vol. 119, (18) 10.1063/1.4948237
• Qian H, Lee KB, Vajargah SH, Novikov SV, Guiney I, Zhang S, Zaidi ZH, Jiang S, Wallis DJ, Foxon CT, Humphreys CJ and Houston PA (2016). Characterization of p-GaN1-xAsx/n-GaN PN junction diodes. Semiconductor Science and Technology  vol. 31, (6) 10.1088/0268-1242/31/6/065020
• Griffiths JT, Oehler F, Tang F, Zhang S, Fu WY, Zhu T, Findlay SD, Zheng C, Etheridge J, Martin TL, Bagot PAJ, Moody MP, Sutherland D, Dawson P, Kappers MJ, Humphreys CJ and Oliver RA (2016). The microstructure of non-polar a-plane (11 2 0) InGaN quantum wells. Journal of Applied Physics  vol. 119, (17) 10.1063/1.4948299
• Han Y, Caliebe M, Hage F, Ramasse Q, Pristovsek M, Zhu T, Scholz F and Humphreys C (2016). Toward defect-free semi-polar GaN templates on pre-structured sapphire. Physica Status Solidi (B) Basic Research  vol. 253, (5) 834-839. 10.1002/pssb.201552636
• Waller WM, Uren MJ, Lee KB, Houston PA, Wallis DJ, Guiney I, Humphreys CJ, Pandey S, Sonsky J and Kuball M (2016). Subthreshold mobility in AlGaN/GaN HEMTs. Ieee Transactions On Electron Devices  vol. 63, (5) 1861-1865. 10.1109/TED.2016.2542588
• Rouet-Leduc B, Barros K, Lookman T and Humphreys CJ (2016). Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learning. Scientific Reports  vol. 6, 10.1038/srep24862
• Caliebe M, Tandukar S, Cheng Z, Hocker M, Han Y, Meisch T, Heinz D, Huber F, Bauer S, Plettl A, Humphreys C, Thonke K and Scholz F (2016). Influence of trench period and depth on MOVPE grown (1122) GaN on patterned r-plane sapphire substrates. Journal of Crystal Growth  vol. 440, 69-75. 10.1016/j.jcrysgro.2016.01.014
• Le Boulbar ED, Edwards PR, Vajargah SH, Griffiths I, Gîrgel I, Coulon PM, Cherns D, Martin RW, Humphreys CJ, Bowen CR, Allsopp DWE and Shields PA (2016). Structural and Optical Emission Uniformity of m-Plane InGaN Single Quantum Wells in Core-Shell Nanorods. Crystal Growth and Design  vol. 16, (4) 1907-1916. 10.1021/acs.cgd.5b01438
• Rhode SL, Horton MK, Sahonta SL, Kappers MJ, Haigh SJ, Pennycook TJ, McAleese C, Humphreys CJ, Dusane RO and Moram MA (2016). Dislocation core structures in (0001) InGaN. Journal of Applied Physics  vol. 119, (10) 10.1063/1.4942847
• Roberts JW, Chalker PR, Lee KB, Houston PA, Cho SJ, Thayne IG, Guiney I, Wallis D and Humphreys CJ (2016). Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics. Applied Physics Letters  vol. 108, (7) 10.1063/1.4942093
• Davies MJ, Hammersley S, Massabuau FCP, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ (2016). A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers. Journal of Applied Physics  vol. 119, (5) 10.1063/1.4941321
• Han Y, Zhu D, Zhu T, Humphreys CJ and Wallis DJ (2016). Origins of hillock defects on GaN templates grown on Si(111). Journal of Crystal Growth  vol. 434, 123-127. 10.1016/j.jcrysgro.2015.11.005
• Pristovsek M, Frentrup M, Han Y and Humphreys CJ (2016). Optimizing GaN (1122) hetero-epitaxial templates grown on (1010) sapphire. Physica Status Solidi (B) Basic Research  vol. 253, (1) 61-66. 10.1002/pssb.201552263
• Kakanakova-Georgieva A, Sahonta SL, Nilsson D, Trinh XT, Son NT, Janzén E and Humphreys CJ (2016). N-Type conductivity bound by the growth temperature: The case of Al0.72Ga0.28N highly doped by silicon. Journal of Materials Chemistry C  vol. 4, (35) 8291-8296. 10.1039/c6tc02825j
• Zhu D and Humphreys CJ (2016). Solid-state lighting based on light emitting diode technology. Optics in Our Time  10.1007/978-3-319-31903-2_5
• Caliebe M, Han Y, Hocker M, Meisch T, Humphreys C, Thonke K and Scholz F (2016). Growth and coalescence studies of (1122) oriented GaN on pre-structured sapphire substrates using marker layers. Physica Status Solidi (B) Basic Research  vol. 253, (1) 46-53. 10.1002/pssb.201552266

2015

• Rhode SL, Horton MK, Fu WY, Sahonta SL, Kappers MJ, Pennycook TJ, Humphreys CJ, Dusane RO and Moram MA (2015). Dislocation core structures in Si-doped GaN. Applied Physics Letters  vol. 107, (24) 10.1063/1.4937457
• (2015). Structural, electronic, and optical properties of m -plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory. Physical Review B - Condensed Matter and Materials Physics  vol. 92, (23) 10.1103/PhysRevB.92.235419
• Zhang S, Cui Y, Griffiths JT, Fu WY, Freysoldt C, Neugebauer J, Humphreys CJ and Oliver RA (2015). Difference in linear polarization of biaxially strained i nx G a1-x N alloys on nonpolar a -plane and m -plane GaN. Physical Review B - Condensed Matter and Materials Physics  vol. 92, (24) 10.1103/PhysRevB.92.245202
• Griffiths JT, Zhang S, Rouet-Leduc B, Fu WY, Bao A, Zhu D, Wallis DJ, Howkins A, Boyd I, Stowe D, Kappers MJ, Humphreys CJ and Oliver RA (2015). Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping. Nano Letters  vol. 15, (11) 7639-7643. 10.1021/acs.nanolett.5b03531
• Meneghini M, Zhu D, Humphreys CJ, Berti M, Gasparotto A, Cesca T, Vinattieri A, Bogani F, Meneghesso G and Zanoni E (2015). Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes. Aip Advances  vol. 5, (10) 10.1063/1.4934491
• Hammersley S, Kappers MJ, Massabuau FCP, Sahonta SL, Dawson P, Oliver RA and Humphreys CJ (2015). Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions. Applied Physics Letters  vol. 107, (13) 10.1063/1.4932200
• Zaidi ZH, Lee KB, Guiney I, Qian H, Jiang S, Wallis DJ, Humphreys CJ and Houston PA (2015). Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implant. Semiconductor Science and Technology  vol. 30, (10) 10.1088/0268-1242/30/10/105007
• Waller WM, Karboyan S, Uren MJ, Lee KB, Houston PA, Wallis DJ, Guiney I, Humphreys CJ and Kuball M (2015). Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs. Ieee Transactions On Electron Devices  vol. 62, (8) 2464-2469. 10.1109/TED.2015.2444911
• Davies MJ, Dawson P, Massabuau FCP, Fol AL, Oliver RA, Kappers MJ and Humphreys CJ (2015). A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures. Physica Status Solidi (B) Basic Research  vol. 252, (5) 866-872. 10.1002/pssb.201451535
• Massabuau FCP, Davies MJ, Blenkhorn WE, Hammersley S, Kappers MJ, Humphreys CJ, Dawson P and Oliver RA (2015). Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures. Physica Status Solidi (B) Basic Research  vol. 252, (5) 928-935. 10.1002/pssb.201451543
• Hammersley S, Davies MJ, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ (2015). Carrier distributions in InGaN/GaN light-emitting diodes. Physica Status Solidi (B) Basic Research  vol. 252, (5) 890-894. 10.1002/pssb.201451534
• Han Y, Caliebe M, Kappers M, Scholz F, Pristovsek M and Humphreys C (2015). Origin of faceted surface hillocks on semi-polar (1 1 2 ¯ 2) GaN templates grown on pre-structured sapphire. Journal of Crystal Growth  vol. 415, 170-175. 10.1016/j.jcrysgro.2014.12.040
• Wallace MJ, Edwards PR, Kappers MJ, Hopkins MA, Oehler F, Sivaraya S, Oliver RA, Humphreys CJ, Allsopp DWE and Martin RW (2015). Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes. Journal of Applied Physics  vol. 117, (11) 10.1063/1.4915628
• Horton MK, Rhode S, Sahonta SL, Kappers MJ, Haigh SJ, Pennycook TJ, Humphreys CJ, Dusane RO and Moram MA (2015). Segregation of in to dislocations in InGaN. Nano Letters  vol. 15, (2) 923-930. 10.1021/nl5036513
• Trindade AJ, Guilhabert B, Xie EY, Ferreira R, McKendry JJD, Zhu D, Laurand N, Gu E, Wallis DJ, Watson IM, Humphreys CJ and Dawson MD (2015). Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing. Optics Express  vol. 23, (7) 9329-9338. 10.1364/OE.23.009329
• Lee KB, Guiney I, Jiang S, Zaidi ZH, Qian H, Wallis DJ, Uren MJ, Kuball M, Humphreys CJ and Houston PA (2015). Enhancement-mode metal-insulator-semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0V and blocking voltage above 1000 V. Applied Physics Express  vol. 8, (3) 10.7567/APEX.8.036502

2014

• Zaidi ZH, Lee KB, Guiney I, Qian H, Jiang S, Wallis DJ, Humphreys CJ and Houston PA (2014). Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors. Journal of Applied Physics  vol. 116, (24) 10.1063/1.4904923
• Oehler F, Sutherland D, Zhu T, Emery R, Badcock TJ, Kappers MJ, Humphreys CJ, Dawson P and Oliver RA (2014). Evaluation of growth methods for the heteroepitaxy of non-polar (1120) GAN on sapphire by MOVPE. Journal of Crystal Growth  vol. 408, 32-41. 10.1016/j.jcrysgro.2014.09.009
• Griffiths JT, Zhu T, Oehler F, Emery RM, Fu WY, Reid BPL, Taylor RA, Kappers MJ, Humphreys CJ and Oliver RA (2014). Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method. Apl Materials  vol. 2, (12) 10.1063/1.4904068
• (2014). Direct observation of depth-dependent atomic displacements associated with dislocations in gallium nitride. Physical Review Letters  vol. 113, (13) 10.1103/PhysRevLett.113.135503
• Massabuau FCP, Davies MJ, Oehler F, Pamenter SK, Thrush EJ, Kappers MJ, Kovács A, Williams T, Hopkins MA, Humphreys CJ, Dawson P, Dunin-Borkowski RE, Etheridge J, Allsopp DWE and Oliver RA (2014). The impact of trench defects in InGaN/GaN light emitting diodes and implications for the green gap problem. Applied Physics Letters  vol. 105, (11) 10.1063/1.4896279
• Davies MJ, Dawson P, Massabuau FCP, Oliver RA, Kappers MJ and Humphreys CJ (2014). The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures. Applied Physics Letters  vol. 105, (9) 10.1063/1.4894834
• Humphreys C (2014). How Cutting-Edge Atomic Resolution Microscopy Can Help to Solve Some of the World’s Energy Problems. Microscopy and Microanalysis  vol. 20, (S2) 11-14. 10.1017/s1431927614001123
• Wallace MJ, Edwards PR, Kappers MJ, Hopkins MA, Oehler F, Sivaraya S, Allsopp DWE, Oliver RA, Humphreys CJ and Martin RW (2014). Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode. Journal of Applied Physics  vol. 116, (3) 10.1063/1.4890497
• Möreke J, Uren MJ, Novikov SV, Foxon CT, Hosseini Vajargah S, Wallis DJ, Humphreys CJ, Haigh SJ, Al-Khalidi A, Wasige E, Thayne I and Kuball M (2014). Investigation of the GaN-on-GaAs interface for vertical power device applications. Journal of Applied Physics  vol. 116, (1) 10.1063/1.4887139
• Venturi G, Castaldini A, Cavallini A, Meneghini M, Zanoni E, Zhu D and Humphreys C (2014). Dislocation-related trap levels in nitride-based light emitting diodes. Applied Physics Letters  vol. 104, (21) 10.1063/1.4879644
• Bruckbauer J, Edwards PR, Sahonta SL, Massabuau FCP, Kappers MJ, Humphreys CJ, Oliver RA and Martin RW (2014). Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures. Journal of Physics D: Applied Physics  vol. 47, (13) 10.1088/0022-3727/47/13/135107
• Kundys D, Schulz S, Oehler F, Sutherland D, Badcock TJ, Dawson P, Kappers MJ, Oliver RA and Humphreys CJ (2014). Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire. Journal of Applied Physics  vol. 115, (11) 10.1063/1.4868692
• Badcock TJ, Dawson P, Davies MJ, Kappers MJ, Massabuau FCP, Oehler F, Oliver RA and Humphreys CJ (2014). Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells. Journal of Applied Physics  vol. 115, (11) 10.1063/1.4868628
• Tian P, McKendry JJD, Gong Z, Zhang S, Watson S, Zhu D, Watson IM, Gu E, Kelly AE, Humphreys CJ and Dawson MD (2014). Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates. Journal of Applied Physics  vol. 115, (3) 10.1063/1.4862298
• Rhode SL, Fu WY, Moram MA, Massabuau FCP, Kappers MJ, McAleese C, Oehler F, Humphreys CJ, Dusane RO and Sahonta SL (2014). Structure and strain relaxation effects of defects in InxGa1-xN epilayers. Journal of Applied Physics  vol. 116, (10) 10.1063/1.4894688
• Massabuau FCP, Le Fol A, Pamenter SK, Oehler F, Kappers MJ, Humphreys CJ and Oliver RA (2014). The impact of growth parameters on trench defects in InGaN/GaN quantum wells. Physica Status Solidi (a) Applications and Materials Science  vol. 211, (4) 740-743. 10.1002/pssa.201300485
• Massabuau FCP, Tartan CC, Traynier R, Blenkhorn WE, Kappers MJ, Dawson P, Humphreys CJ and Oliver RA (2014). The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method. Journal of Crystal Growth  vol. 386, 88-93. 10.1016/j.jcrysgro.2013.10.004
• Naresh-Kumar G, Bruckbauer J, Edwards PR, Kraeusel S, Hourahine B, Martin RW, Kappers MJ, Moram MA, Lovelock S, Oliver RA, Humphreys CJ and Trager-Cowan C (2014). Coincident electron channeling and cathodoluminescence studies of threading dislocations in GaN. Microscopy and Microanalysis  vol. 20, (1) 55-60. 10.1017/S1431927613013755
• Calciati M, Goano M, Bertazzi F, Vallone M, Zhou X, Ghione G, Meneghini M, Meneghesso G, Zanoni E, Bellotti E, Verzellesi G, Zhu D and Humphreys C (2014). Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues. Aip Advances  vol. 4, (6) 10.1063/1.4882176
• Dinh DV, Oehler F, Zubialevich VZ, Kappers MJ, Alam SN, Caliebe M, Scholtz F, Humphreys CJ and Parbrook PJ (2014). Comparative study of polar and semipolar (1122) InGaN layers grown by metalorganic vapour phase epitaxy. Journal of Applied Physics  vol. 116, (15) 10.1063/1.4898569
• Davies MJ, Dawson P, Massabuau FCP, Oehler F, Oliver RA, Kappers MJ, Badcock TJ and Humphreys CJ (2014). The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells. Physica Status Solidi (C) Current Topics in Solid State Physics  vol. 11, (3-4) 750-753. 10.1002/pssc.201300452

2013

• Zhang S, Fu WY, Holec D, Humphreys CJ and Moram MA (2013). Elastic constants and critical thicknesses of ScGaN and ScAlN. Journal of Applied Physics  vol. 114, (24) 10.1063/1.4848036
• Zhang S, Zhang Y, Cui Y, Freysoldt C, Neugebauer J, Lieten RR, Barnard JS and Humphreys CJ (2013). Interfacial structure and chemistry of GaN on Ge(111). Physical Review Letters  vol. 111, (25) 10.1103/PhysRevLett.111.256101
• Trindade AJ, Guilhabert B, Massoubre D, Zhu D, Laurand N, Gu E, Watson IM, Humphreys CJ and Dawson MD (2013). Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates. Applied Physics Letters  vol. 103, (25) 10.1063/1.4851875
• Zhang S, Holec D, Fu WY, Humphreys CJ and Moram MA (2013). Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides. Journal of Applied Physics  vol. 114, (13) 10.1063/1.4824179
• Zhu D, Wallis DJ and Humphreys CJ (2013). Prospects of III-nitride optoelectronics grown on Si. Reports On Progress in Physics  vol. 76, (10) 10.1088/0034-4885/76/10/106501
• Oliver RA, Massabuau FCP, Kappers MJ, Phillips WA, Thrush EJ, Tartan CC, Blenkhorn WE, Badcock TJ, Dawson P, Hopkins MA, Allsopp DWE and Humphreys CJ (2013). The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes. Applied Physics Letters  vol. 103, (14) 10.1063/1.4824193
• Hirsch PB, Lozano JG, Rhode S, Horton MK, Moram MA, Zhang S, Kappers MJ, Humphreys CJ, Yasuhara A, Okunishi E and Nellist PD (2013). The dissociation of the [a + c] dislocation in GaN. Philosophical Magazine  vol. 93, (28-30) 3925-3938. 10.1080/14786435.2013.797617
• Oehler F, Zhu T, Rhode S, Kappers MJ, Humphreys CJ and Oliver RA (2013). Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges. Journal of Crystal Growth  vol. 383, 12-18. 10.1016/j.jcrysgro.2013.07.035
• Wallis DJ, Zhu D, Oehler F, Westwater SP, Pujol A and Humphreys CJ (2013). Measuring the composition of AlGaN layers in GaN based structures grown on 150 mm Si substrates using (2 0 5) reciprocal space maps. Semiconductor Science and Technology  vol. 28, (9) 10.1088/0268-1242/28/9/094006
• Oehler F, Vickers ME, Kappers MJ, Humphreys CJ and Oliver RA (2013). Fundamentals of X-ray diffraction characterisation of strain in GaN based compounds. Japanese Journal of Applied Physics  vol. 52, (8 PART 2) 10.7567/JJAP.52.08JB29
• Meneghini M, Vaccari S, Garbujo A, Trivellin N, Zhu D, Humphreys CJ, Calciati M, Goano M, Bertazzi F, Ghione G, Bellotti E, Meneghesso G and Zanoni E (2013). Electroluminescence analysis and simulation of the effects of injection and temperature on carrier distribution in InGaN-based light-emitting diodes with color-coded quantum wells. Japanese Journal of Applied Physics  vol. 52, (8 PART 2) 10.7567/JJAP.52.08JG09
• Badcock TJ, Hammersley S, Watson-Parris D, Dawson P, Godfrey MJ, Kappers MJ, McAleese C, Oliver RA and Humphreys CJ (2013). Carrier density dependent localization and consequences for efficiency droop in InGaN/GaN quantum well structures. Japanese Journal of Applied Physics  vol. 52, (8 PART 2) 10.7567/JJAP.52.08JK10
• Badcock TJ, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ (2013). Evidence for dark states in the temperature dependent recombination dynamics of InGaN/GaN quantum wells. Japanese Journal of Applied Physics  vol. 52, (8 PART 2) 10.7567/JJAP.52.08JL12
• Zhang Y, Kappers MJ, Zhu D, Oehler F, Gao F and Humphreys CJ (2013). The effect of dislocations on the efficiency of InGaN/GaN solar cells. Solar Energy Materials and Solar Cells  vol. 117, 279-284. 10.1016/j.solmat.2013.06.022
• Rhode SK, Horton MK, Kappers MJ, Zhang S, Humphreys CJ, Dusane RO, Sahonta SL and Moram MA (2013). Mg doping affects dislocation core structures in GaN. Physical Review Letters  vol. 111, (2) 10.1103/PhysRevLett.111.025502
• Taylor E, Fang F, Oehler F, Edwards PR, Kappers MJ, Lorenz K, Alves E, McAleese C, Humphreys CJ and Martin RW (2013). Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates. Semiconductor Science and Technology  vol. 28, (6) 10.1088/0268-1242/28/6/065011
• Massabuau FCP, Trinh-Xuan L, Lodié D, Thrush EJ, Zhu D, Oehler F, Zhu T, Kappers MJ, Humphreys CJ and Oliver RA (2013). Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells. Journal of Applied Physics  vol. 113, (7) 10.1063/1.4792505
• Jouvet N, Kappers MJ, Humphreys CJ and Oliver RA (2013). The impact of substrate miscut on the morphology of InGaN epitaxial layers subjected to a growth interruption. Journal of Applied Physics  vol. 113, (6) 10.1063/1.4790311
• Maaskant PP, Shams H, Akhter M, Henry W, Kappers MJ, Zhu D, Humphreys CJ and Corbett B (2013). High-speed substrate-emitting micro-light-emitting diodes for applications requiring high radiance. Applied Physics Express  vol. 6, (2) 10.7567/APEX.6.022102
• Davies MJ, Badcock TJ, Dawson P, Kappers MJ, Oliver RA and Humphreys CJ (2013). High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop. Applied Physics Letters  vol. 102, (2) 10.1063/1.4781398
• Humphreys CJ (2013). The significance of Braggs law in electron diffraction and microscopy, and Braggs second law. Acta Crystallographica Section a: Foundations of Crystallography  vol. 69, (1) 45-50. 10.1107/S0108767312047587
• Sahonta SL, Kappers MJ, Zhu D, Puchtler TJ, Zhu T, Bennett SE, Humphreys CJ and Oliver RA (2013). Properties of trench defects in InGaN/GaN quantum well structures. Physica Status Solidi (a) Applications and Materials Science  vol. 210, (1) 195-198. 10.1002/pssa.201200408

2012

• Massabuau FCP, Sahonta SL, Trinh-Xuan L, Rhode S, Puchtler TJ, Kappers MJ, Humphreys CJ and Oliver RA (2012). Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures. Applied Physics Letters  vol. 101, (21) 10.1063/1.4768291
• Badcock TJ, Hao R, Moram MA, Kappers MJ, Dawson P, Oliver RA and Humphreys CJ (2012). Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wells. Journal of Applied Physics  vol. 112, (1) 10.1063/1.4731730
• Meneghini M, Vaccari S, Trivellin N, Zhu D, Humphreys C, Butendheich R, Leirer C, Hahn B, Meneghesso G and Zanoni E (2012). Analysis of defect-related localized emission processes in InGaN/GaN-based LEDs. Ieee Transactions On Electron Devices  vol. 59, (5) 1416-1422. 10.1109/TED.2012.2186970
• Hammersley S, Watson-Parris D, Dawson P, Godfrey MJ, Badcock TJ, Kappers MJ, McAleese C, Oliver RA and Humphreys CJ (2012). The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures. Journal of Applied Physics  vol. 111, (8) 10.1063/1.3703062
• Bennett SE, Smeeton TM, Saxey DW, Smith GDW, Hooper SE, Heffernan J, Humphreys CJ and Oliver RA (2012). Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy. Journal of Applied Physics  vol. 111, (5) 10.1063/1.3692569
• Amari H, Kappers MJ, Humphreys CJ, Chèze C and Walther T (2012). Measurement of the Al content in AlGaN epitaxial layers by combined energy-dispersive X-ray and electron energy-loss spectroscopy in a transmission electron microscope. Physica Status Solidi (C) Current Topics in Solid State Physics  vol. 9, (3-4) 1079-1082. 10.1002/pssc.201100165
• Vickers ME, Hollander JL, McAleese C, Kappers MJ, Moram MA and Humphreys CJ (2012). Determination of the composition and thickness of semi-polar and non-polar III-nitride films and quantum wells using X-ray scattering. Journal of Applied Physics  vol. 111, (4) 10.1063/1.3678631
• Elsherif OS, Vernon-Parry KD, Dharmadasa IM, Evans-Freeman JH, Airey RJ, Kappers MJ and Humphreys CJ (2012). Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements. Thin Solid Films  vol. 520, (7) 3064-3070. 10.1016/j.tsf.2011.11.020
• Radtke G, Couillard M, Botton GA, Zhu D and Humphreys CJ (2012). Structure and chemistry of the Si(111)/AlN interface. Applied Physics Letters  vol. 100, (1) 10.1063/1.3674984
• Knoll SM, Zhang S, Joyce TB, Kappers MJ, Humphreys CJ and Moram MA (2012). Growth, microstructure and morphology of epitaxial ScGaN films. Physica Status Solidi (a) Applications and Materials Science  vol. 209, (1) 33-40. 10.1002/pssa.201100158
• Badcock TJ, Kappers MJ, Moram MA, Dawson P and Humphreys CJ (2012). Modification of carrier localization in basal-plane stacking faults: The effect of Si-doping in a-plane GaN. Physica Status Solidi (B) Basic Research  vol. 249, (3) 498-502. 10.1002/pssb.201100480
• Badcock TJ, Kappers MJ, Moram MA, Hao R, Dawson P and Humphreys CJ (2012). Exciton confinement in narrow non-polar InGaN/GaN quantum wells grown on r-plane sapphire. Physica Status Solidi (B) Basic Research  vol. 249, (3) 494-497. 10.1002/pssb.201100479
• Zhu D, McAleese C, Häberlen M, Kappers MJ, Hylton N, Dawson P, Radtke G, Couillard M, Botton GA, Sahonta SL and Humphreys CJ (2012). High-efficiency InGaN/GaN quantum well structures on large area silicon substrates. Physica Status Solidi (a) Applications and Materials Science  vol. 209, (1) 13-16. 10.1002/pssa.201100129

2011

• Hao R, Kappers MJ, Moram MA and Humphreys CJ (2011). Defect reduction processes in heteroepitaxial non-polar a-plane GaN films. Journal of Crystal Growth  vol. 337, (1) 81-86. 10.1016/j.jcrysgro.2011.10.004
• Moram MA, Kappers MJ, Massabuau F, Oliver RA and Humphreys CJ (2011). Response to Comment on the effects of Si doping on dislocation movement and tensile stress in GaN films' [J. Appl. Phys. 109, 073509 (2011)]. Journal of Applied Physics  vol. 110, (9) 10.1063/1.3656431
• Zhang Y, Fu WY, Humphreys C and Lieten R (2011). Structural characterisation of improved GaN epilayers grown on a Ge(111) substrate. Applied Physics Express  vol. 4, (9) 10.1143/APEX.4.091001
• Badcock TJ, Hao R, Moram MA, Kappers MJ, Dawson P and Humphreys CJ (2011). The effect of dislocation density and surface morphology on the optical properties of InGaN/GaN quantum wells grown on r-plane sapphire substrates. Japanese Journal of Applied Physics  vol. 50, (8 PART 1) 10.1143/JJAP.50.080201
• Bennett SE, Saxey DW, Kappers MJ, Barnard JS, Humphreys CJ, Smith GDW and Oliver RA (2011). Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells. Applied Physics Letters  vol. 99, (2) 10.1063/1.3610468
• Badcock TJ, Hao R, Moram MA, Dawson P, Kappers MJ and Humphreys CJ (2011). The effect of indium concentration on the optical properties of a-plane InGaN/GaN quantum wells grown on r-plane sapphire substrates. Physica Status Solidi (a) Applications and Materials Science  vol. 208, (7) 1529-1531. 10.1002/pssa.201001007
• Fu WY, Kappers MJ, Zhang Y, Humphreys CJ and Moram MA (2011). Dislocation climb in c-plane ALN films. Applied Physics Express  vol. 4, (6) 10.1143/APEX.4.065503
• Holec D, Rachbauer R, Kiener D, Cherns PD, Costa PMFJ, McAleese C, Mayrhofer PH and Humphreys CJ (2011). Towards predictive modeling of near-edge structures in electron energy-loss spectra of AlN-based ternary alloys. Physical Review B - Condensed Matter and Materials Physics  vol. 83, (16) 10.1103/PhysRevB.83.165122
• Moram MA, Kappers MJ, Massabuau F, Oliver RA and Humphreys CJ (2011). The effects of Si doping on dislocation movement and tensile stress in GaN films. Journal of Applied Physics  vol. 109, (7) 10.1063/1.3553841
• Watson-Parris D, Godfrey MJ, Dawson P, Oliver RA, Galtrey MJ, Kappers MJ and Humphreys CJ (2011). Carrier localization mechanisms in InxGa1-xN/GaN quantum wells. Physical Review B - Condensed Matter and Materials Physics  vol. 83, (11) 10.1103/PhysRevB.83.115321
• Bennett SE, Ulfig RM, Clifton PH, Kappers MJ, Barnard JS, Humphreys CJ and Oliver RA (2011). Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlattice. Ultramicroscopy  vol. 111, (3) 207-211. 10.1016/j.ultramic.2010.11.028
• Zhu D and Humphreys CJ (2011). Lighting. Fundamentals of Materials For Energy and Environmental Sustainability  10.1017/CBO9780511718786.041
• Humphreys CJ (2011). The Mystery of the last supper: Reconstructing the final days of Jesus. 10.1017/CBO9780511973871
• Chee AKW, Broom RF, Humphreys CJ and Bosch EGT (2011). A quantitative model for doping contrast in the scanning electron microscope using calculated potential distributions and Monte Carlo simulations. Journal of Applied Physics  vol. 109, (1) 10.1063/1.3524186
• Zhu D, McAleese C, Häberlen M, Salcianu C, Thrush T, Kappers M, Phillips A, Lane P, Kane M, Wallis D, Martin T, Astles M, Hylton N, Dawson P and Humphreys C (2011). Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates. Journal of Applied Physics  vol. 109, (1) 10.1063/1.3530602

2010

• Moram MA, Sadler TC, Häberlen M, Kappers MJ and Humphreys CJ (2010). Dislocation movement in GaN films. Applied Physics Letters  vol. 97, (26) 10.1063/1.3532965
• Radtke G, Couillard M, Botton GA, Zhu D and Humphreys CJ (2010). Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy. Applied Physics Letters  vol. 97, (25) 10.1063/1.3527928
• Chang TY, Moram MA, McAleese C, Kappers MJ and Humphreys CJ (2010). Inclined dislocation arrays in AlGaN/AlGaN quantum well structures emitting at 290 nm. Journal of Applied Physics  vol. 108, (12) 10.1063/1.3525622
• Hao R, Zhu T, Hberlen M, Chang TY, Kappers MJ, Oliver RA, Humphreys CJ and Moram MA (2010). The effects of annealing on non-polar (1 1 2̄ 0) a-plane GaN films. Journal of Crystal Growth  vol. 312, (23) 3536-3543. 10.1016/j.jcrysgro.2010.08.041
• Kurniawan O, Tan CC, Ong VKS, Li E and Humphreys CJ (2010). A direct method for charge collection probability computation using the reciprocity theorem. Ieee Transactions On Electron Devices  vol. 57, (10) 2455-2461. 10.1109/TED.2010.2056291
• (2010). Electronic and optical properties of nonpolar a-plane GaN quantum wells. Physical Review B - Condensed Matter and Materials Physics  vol. 82, (12) 10.1103/PhysRevB.82.125318
• Oliver RA, Bennett SE, Zhu T, Beesley DJ, Kappers MJ, Saxey DW, Cerezo A and Humphreys CJ (2010). Microstructural origins of localization in InGaN quantum wells. Journal of Physics D: Applied Physics  vol. 43, (35) 10.1088/0022-3727/43/35/354003
• Häberlen M, Badcock TJ, Moram MA, Hollander JL, Kappers MJ, Dawson P, Humphreys CJ and Oliver RA (2010). Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth. Journal of Applied Physics  vol. 108, (3) 10.1063/1.3460641
• Jiang B, Zuo JM, Holec D, Humphreys CJ, Spackman M and Spence JCH (2010). Combined structure-factor phase measurement and theoretical calculations for mapping of chemical bonds in GaN. Acta Crystallographica Section a: Foundations of Crystallography  vol. 66, (4) 446-450. 10.1107/S0108767310008664
• Bennett SE, Holec D, Kappers MJ, Humphreys CJ and Oliver RA (2010). Imaging dislocations in gallium nitride across broad areas using atomic force microscopy. Review of Scientific Instruments  vol. 81, (6) 10.1063/1.3430539
• Taylor RA, Jarjour AF, Collins DP, Holmes MJ, Oliver RA, Kappers MJ and Humphreys CJ (2010). Cavity Enhancement of single quantum dot emission in the blue. Nanoscale Research Letters  vol. 5, (3) 608-612. 10.1007/s11671-009-9514-4
• Moram MA, Johnston CF, Kappers MJ and Humphreys CJ (2010). Measuring dislocation densities in nonpolar a-plane GaN films using atomic force microscopy. Journal of Physics D: Applied Physics  vol. 43, (5) 10.1088/0022-3727/43/5/055303
• Ashraf H, Sridhara Rao DV, Gogova D, Siche D, Fornari R, Humphreys CJ and Hageman PR (2010). Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiNx treatment. Journal of Crystal Growth  vol. 312, (4) 595-600. 10.1016/j.jcrysgro.2009.11.043
• Kappers MJ, Moram MA, Sridhara Rao DV, McAleese C and Humphreys CJ (2010). Low dislocation density GaN growth on high-temperature AlN buffer layers on (0 0 0 1) sapphire. Journal of Crystal Growth  vol. 312, (3) 363-367. 10.1016/j.jcrysgro.2009.11.014

2009

• Moram MA, Zhang Y, Joyce TB, Holec D, Chalker PR, Mayrhofer PH, Kappers MJ and Humphreys CJ (2009). Structural properties of wurtzitelike ScGaN films grown by NH 3-molecular beam epitaxy. Journal of Applied Physics  vol. 106, (11) 10.1063/1.3268466
• Sumner J, Oliver RA, Kappers MJ and Humphreys CJ (2009). Scanning capacitance microscopy studies of unintentional doping in epitaxial lateral overgrowth GaN. Journal of Applied Physics  vol. 106, (10) 10.1063/1.3259379
• Moram MA, Ghedia CS, Rao DVS, Barnard JS, Zhang Y, Kappers MJ and Humphreys CJ (2009). On the origin of threading dislocations in GaN films. Journal of Applied Physics  vol. 106, (7) 10.1063/1.3225920
• Charash R, Maaskant PP, Lewis L, McAleese C, Kappers MJ, Humphreys CJ and Corbett B (2009). Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes. Applied Physics Letters  vol. 95, (15) 10.1063/1.3244203
• Moram MA, Oliver RA, Kappers MJ and Humphreys CJ (2009). The spatial distribution of threading dislocations in gallium nitride films. Advanced Materials  vol. 21, (38-39) 3941-3944. 10.1002/adma.200901095
• Oliver RA, Sumner J, Kappers MJ and Humphreys CJ (2009). Morphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy images. Journal of Applied Physics  vol. 106, (5) 10.1063/1.3212971
• Moram MA, Johnston CF, Kappers MJ and Humphreys CJ (2009). The effects of film surface roughness on x-ray diffraction of nonpolar gallium nitride films. Journal of Physics D: Applied Physics  vol. 42, (13) 10.1088/0022-3727/42/13/135407
• Sridhara Rao DV, McLaughlin K, Kappers MJ and Humphreys CJ (2009). Lattice distortions in GaN on sapphire using the CBED-HOLZ technique. Ultramicroscopy  vol. 109, (10) 1250-1255. 10.1016/j.ultramic.2009.05.018
• Moram MA, Johnston CF, Kappers MJ and Humphreys CJ (2009). Investigating stacking faults in nonpolar gallium nitride films using X-ray diffraction. Physica B: Condensed Matter  vol. 404, (16) 2189-2191. 10.1016/j.physb.2009.04.010
• Hertkorn J, Thapa SB, Wunderer T, Scholz F, Wu ZH, Wei QY, Ponce FA, Moram MA, Humphreys CJ, Vierheilig C and Schwarz UT (2009). Highly conductive modulation doped composition graded p -AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy. Journal of Applied Physics  vol. 106, (1) 10.1063/1.3160312
• Badcock TJ, Dawson P, Kappers MJ, McAleese C, Hollander JL, Johnston CF, Sridhara Rao DV, Sanchez AM and Humphreys CJ (2009). Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substrates. Journal of Applied Physics  vol. 105, (12) 10.1063/1.3156688
• Moram MA, Johnston CF, Hollander JL, Kappers MJ and Humphreys CJ (2009). Understanding x-ray diffraction of nonpolar gallium nitride films. Journal of Applied Physics  vol. 105, (11) 10.1063/1.3129307
• Collins D, Jarjour A, Hadjipanayi M, Taylor R, Oliver R, Kappers M, Humphreys C and Tahraoui A (2009). Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot. Nanotechnology  vol. 20, (24) 10.1088/0957-4484/20/24/245702
• Holec D, Sridhara Rao DV and Humphreys CJ (2009). HANSIS software tool for the automated analysis of HOLZ lines. Ultramicroscopy  vol. 109, (7) 837-844. 10.1016/j.ultramic.2009.03.026
• Moram MA, Johnston CF, Kappers MJ and Humphreys CJ (2009). Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers. Journal of Crystal Growth  vol. 311, (12) 3239-3242. 10.1016/j.jcrysgro.2009.03.029
• Johnston CF, Kappers MJ, Moram MA, Hollander JL and Humphreys CJ (2009). Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire. Journal of Crystal Growth  vol. 311, (12) 3295-3299. 10.1016/j.jcrysgro.2009.03.044
• Johnston CF, Moram MA, Kappers MJ and Humphreys CJ (2009). Defect reduction in (11 2- 2) semipolar GaN grown on m -plane sapphire using ScN interlayers. Applied Physics Letters  vol. 94, (16) 10.1063/1.3119321
• Johnston CF, Kappers MJ and Humphreys CJ (2009). Microstructural evolution of nonpolar (11-20) GaN grown on (1-102) sapphire using a 3D-2D method. Journal of Applied Physics  vol. 105, (7) 10.1063/1.3103305
• Hall JL, Moram MA, Sanchez A, Novikov SV, Kent AJ, Foxon CT, Humphreys CJ and Campion RP (2009). Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy. Journal of Crystal Growth  vol. 311, (7) 2054-2057. 10.1016/j.jcrysgro.2008.11.084
• Moss DM, Akimov AV, Kent AJ, Glavin BA, Kappers MJ, Hollander JL, Moram MA and Humphreys CJ (2009). Coherent terahertz acoustic vibrations in polar and semipolar gallium nitride-based superlattices. Applied Physics Letters  vol. 94, (1) 10.1063/1.3056653

2008

• Jarjour AF, Taylor RA, Oliver RA, Kappers MJ, Humphreys CJ and Tahraoui A (2008). Electrically driven single InGaN/GaN quantum dot emission. Applied Physics Letters  vol. 93, (23) 10.1063/1.3044395
• Holec D, Zhang Y, Rao DVS, Kappers MJ, McAleese C and Humphreys CJ (2008). Equilibrium critical thickness for misfit dislocations in III-nitrides. Journal of Applied Physics  vol. 104, (12) 10.1063/1.3033553
• Moram MA, Barber ZH and Humphreys CJ (2008). The effect of oxygen incorporation in sputtered scandium nitride films. Thin Solid Films  vol. 516, (23) 8569-8572. 10.1016/j.tsf.2008.05.050
• Badcock TJ, Dawson P, Kappers MJ, McAleese C, Hollander JL, Johnston CF, Rao DVS, Sanchez AM and Humphreys CJ (2008). Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates. Applied Physics Letters  vol. 93, (10) 10.1063/1.2971205
• Jiang N, Qiu J, Humphreys CJ and Spence JCH (2008). Observation of long-range compositional fluctuations in glasses: Implications for atomic and electronic structure. Micron  vol. 39, (6) 698-702. 10.1016/j.micron.2007.10.014
• Holec D, Costa PMFJ, Cherns PD and Humphreys CJ (2008). Electron energy loss near edge structure (ELNES) spectra of AlN and AlGaN: A theoretical study using the Wien2k and Telnes programs. Micron  vol. 39, (6) 690-697. 10.1016/j.micron.2007.10.013
• Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Clifton PH, Larson D, Saxey DW and Cerezo A (2008). Three-dimensional atom probe analysis of green- and blue-emitting In x Ga1-x NGaN multiple quantum well structures. Journal of Applied Physics  vol. 104, (1) 10.1063/1.2938081
• Oliver RA, Van der Laak NK, Kappers MJ and Humphreys CJ (2008). Insights into the growth mechanism of InxGa1-xN epitaxial nanostructures formed using a silane predose. Journal of Crystal Growth  vol. 310, (15) 3459-3465. 10.1016/j.jcrysgro.2008.05.001
• Oliver RA, Galtrey MJ and Humphreys CJ (2008). High resolution transmission electron microscopy and three-dimensional atom probe microscopy as complementary techniques for the high spatial resolution analysis of GaN based quantum well systems. Materials Science and Technology  vol. 24, (6) 675-681. 10.1179/174328408X270301
• Moram MA, Vickers ME, Kappers MJ and Humphreys CJ (2008). The effect of wafer curvature on x-ray rocking curves from gallium nitride films. Journal of Applied Physics  vol. 103, (9) 10.1063/1.2913514
• Moram MA, Novikov SV, Kent AJ, Nörenberg C, Foxon CT and Humphreys CJ (2008). Growth of epitaxial thin films of scandium nitride on 100-oriented silicon. Journal of Crystal Growth  vol. 310, (11) 2746-2750. 10.1016/j.jcrysgro.2008.01.045
• Rossetti M, Smeeton TM, Tan WS, Kauer M, Hooper SE, Heffernan J, Xiu H and Humphreys CJ (2008). Degradation of InGaNGaN laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings. Applied Physics Letters  vol. 92, (15) 10.1063/1.2908919
• Sumner J, Oliver RA, Kappers MJ and Humphreys CJ (2008). Assessment of the performance of scanning capacitance microscopy for n -type gallium nitride. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures  vol. 26, (2) 611-617. 10.1116/1.2890705
• Hollander JL, Kappers MJ, McAleese C and Humphreys CJ (2008). Improvements in a -plane GaN crystal quality by a two-step growth process. Applied Physics Letters  vol. 92, (10) 10.1063/1.2830023
• De Sousa Pereira SM, Martins MA, Trindade T, Watson IM, Zhu D and Humphreys CJ (2008). Controlled integration of nanocrystals in inverted hexagonal nano-pits at the surface of light-emitting heterostructures. Advanced Materials  vol. 20, (5) 1038-1043. 10.1002/adma.200701739
• Galtrey MJ, Oliver RA, Kappers MJ, McAleese C, Zhu D, Humphreys CJ, Clifton PH, Larson D and Cerezo A (2008). Compositional inhomogeneity of a high-efficiency Inx Ga1-x N based multiple quantum well ultraviolet emitter studied by three dimensional atom probe. Applied Physics Letters  vol. 92, (4) 10.1063/1.2829592
• Zhao LX, Thrush EJ, Humphreys CJ and Phillips WA (2008). Degradation of GaN-based quantum well light-emitting diodes. Journal of Applied Physics  vol. 103, (2) 10.1063/1.2829781
• Ketteniss N, Oliver RA, McAleese C, Kappers MJ, Zhang Y and Humphreys CJ (2008). The role of strain in controlling the surface morphology of Al x Ga 1-x N following in situ treatment with SiH 4 and NH 3. Applied Surface Science  vol. 254, (7) 2124-2130. 10.1016/j.apsusc.2007.08.075
• Humphreys CJ (2008). Solid-state lighting. Mrs Bulletin  vol. 33, (4) 459-470. 10.1557/mrs2008.91

2007

• Emiroglu D, Evans-Freeman JH, Kappers MJ, McAleese C and Humphreys CJ (2007). Deep electronic states associated with a metastable hole trap in n-type GaN. Physica B: Condensed Matter  vol. 401-402, 311-314. 10.1016/j.physb.2007.08.175
• Cerezo A, Clifton PH, Galtrey MJ, Humphreys CJ, Kelly TF, Larson DJ, Lozano-Perez S, Marquis EA, Oliver RA, Sha G, Thompson K, Zandbergen M and Alvis RL (2007). Atom probe tomography today. Materials Today  vol. 10, (12) 36-42. 10.1016/S1369-7021(07)70306-1
• Jarjour AF, Oliver RA, Tahraoui A, Kappers MJ, Humphreys CJ and Taylor RA (2007). Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot. Physical Review Letters  vol. 99, (19) 10.1103/PhysRevLett.99.197403
• Hylton NP, Dawson P, Kappers MJ, McAleese C and Humphreys CJ (2007). Excitation energy dependence of the photoluminescence spectrum of an Inx Ga1-x N/GaN single quantum well structure. Physical Review B - Condensed Matter and Materials Physics  vol. 76, (20) 10.1103/PhysRevB.76.205403
• Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Clifton PH, Cerezo A and Smith GDW (2007). Response to comment on 'Three-dimensional atom probe studies of an Inx Ga1-x NGaN multiple quantum well structure: Assessment of possible indium clustering' [Appl. Phys. Lett. 91, 176101 (2007)]. Applied Physics Letters  vol. 91, (17) 10.1063/1.2783977
• Moram MA, Zhang Y, Kappers MJ, Barber ZH and Humphreys CJ (2007). Dislocation reduction in gallium nitride films using scandium nitride interlayers. Applied Physics Letters  vol. 91, (15) 10.1063/1.2794009
• Moram MA, Kappers MJ, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ (2007). Growth of dislocation-free GaN islands on Si(1 1 1) using a scandium nitride buffer layer. Journal of Crystal Growth  vol. 308, (2) 302-308. 10.1016/j.jcrysgro.2007.09.009
• Moram MA, Kappers MJ, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ (2007). Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer. Journal of Crystal Growth  vol. 308, (2) 302-308. 10.1016/j.jcrysgro.2007.09.009
• Zhang Y, McAleese C, Xiu H, Humphreys CJ, Lieten RR, Degroote B and Borghs G (2007). Misoriented domains in (0001)-GaN/(111)-Ge grown by molecular beam epitaxy. Applied Physics Letters  vol. 91, (9) 10.1063/1.2779099
• Jarjour AF, Taylor RA, Oliver RA, Kappers MJ, Humphreys CJ and Tahraoui A (2007). Cavity-enhanced blue single-photon emission from a single InGaNGaN quantum dot. Applied Physics Letters  vol. 91, (5) 10.1063/1.2767217
• Moram MA, Barber ZH and Humphreys CJ (2007). Accurate experimental determination of the Poisson's ratio of GaN using high-resolution x-ray diffraction. Journal of Applied Physics  vol. 102, (2) 10.1063/1.2749484
• Van Der Laak NK, Oliver RA, Kappers MJ and Humphreys CJ (2007). Characterization of InGaN quantum wells with gross fluctuations in width. Journal of Applied Physics  vol. 102, (1) 10.1063/1.2751401
• Humphreys CJ (2007). Does In form In-rich clusters in InGaN quantum wells? Philosophical Magazine  vol. 87, (13) 1971-1982. 10.1080/14786430701342172
• Galtrey M, Oliver R and Humphreys C (2007). Atom probe provides evidence to question InGaN cluster theory. Compound Semiconductor  vol. 13, (4) 27-30.
• Moldovan G, Kazemian P, Edwards PR, Ong VKS, Kurniawan O and Humphreys CJ (2007). Low-voltage cross-sectional EBIC for characterisation of GaN-based light emitting devices. Ultramicroscopy  vol. 107, (4-5) 382-389. 10.1016/j.ultramic.2006.10.002
• Van Der Laak NK, Oliver RA, Kappers MJ and Humphreys CJ (2007). Role of gross well-width fluctuations in bright, green-emitting single InGaNGaN quantum well structures. Applied Physics Letters  vol. 90, (12) 10.1063/1.2715166
• Graham DM, Dawson P, Chabrol GR, Hylton NP, Zhu D, Kappers MJ, McAleese C and Humphreys CJ (2007). High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380 nm. Journal of Applied Physics  vol. 101, (3) 10.1063/1.2434823
• Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Stokes DJ, Clifton PH and Cerezo A (2007). Three-dimensional atom probe studies of an InxGa 1-xN/GaN multiple quantum well structure: Assessment of possible indium clustering. Applied Physics Letters  vol. 90, (6) 10.1063/1.2431573
• Fraser IS, Oliver RA, Sumner J, McAleese C, Kappers MJ and Humphreys CJ (2007). Compositional contrast in Al x Ga 1-x N/GaN heterostructures using scanning spreading resistance microscopy. Applied Surface Science  vol. 253, (8) 3937-3944. 10.1016/j.apsusc.2006.08.028
• Kazemian P, Mentink SAM, Rodenburg C and Humphreys CJ (2007). Quantitative secondary electron energy filtering in a scanning electron microscope and its applications. Ultramicroscopy  vol. 107, (2-3) 140-150. 10.1016/j.ultramic.2006.06.003
• Founta S, Coraux J, Jalabert D, Bougerol C, Rol F, Mariette H, Renevier H, Daudin B, Oliver RA, Humphreys CJ, Noakes TCQ and Balley P (2007). Anisotropic strain relaxation in a-plane GaN quantum dots. Journal of Applied Physics  vol. 101, (6) 10.1063/1.2713937
• Smeeton T and Humphreys C (2007). Perspectives on Electronic and Optoelectronic Materials. Springer Handbooks  10.1007/978-0-387-29185-7_1

2006

• Graham DM, Dawson P, Godfrey MJ, Kappers MJ and Humphreys CJ (2006). Resonant excitation photoluminescence studies of InGaN/GaN single quantum well structures. Applied Physics Letters  vol. 89, (21) 10.1063/1.2392820
• Ong VKS, Kurniawan O, Moldovan G and Humphreys CJ (2006). A method of accurately determining the positions of the edges of depletion regions in semiconductor junctions. Journal of Applied Physics  vol. 100, (11) 10.1063/1.2369652
• Moram MA, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ (2006). Microstructure of epitaxial scandium nitride films grown on silicon. Applied Surface Science  vol. 252, (24) 8385-8387. 10.1016/j.apsusc.2005.11.069
• Spence JCH, Kolar HR, Hembree G, Humphreys CJ, Barnard J, Datta R, Koch C, Ross FM and Justo JF (2006). Imaging dislocation cores - The way forward. Philosophical Magazine  vol. 86, (29-31) 4781-4796. 10.1080/14786430600776322
• Kazemian P, Mentink SAM, Rodenburg C and Humphreys CJ (2006). High resolution quantitative two-dimensional dopant mapping using energy-filtered secondary electron imaging. Journal of Applied Physics  vol. 100, (5) 10.1063/1.2335980
• Moram MA, Barber ZH, Humphreys CJ, Joyce TB and Chalker PR (2006). Young's modulus, Poisson's ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon. Journal of Applied Physics  vol. 100, (2) 10.1063/1.2217106
• Oliver RA, Kappers MJ and Humphreys CJ (2006). Insights into the origin of threading dislocations in GaN/Al 2O3 from atomic force microscopy. Applied Physics Letters  vol. 89, (1) 10.1063/1.2219747
• Moldovan G, Roe MJ, Harrison I, Kappers M, Humphreys CJ and Brown PD (2006). Effects of KOH etching on the properties of Ga-polar n-GaN surfaces. Philosophical Magazine  vol. 86, (16) 2315-2327. 10.1080/14786430500522628
• Kazemian P, Twitchett AC, Humphreys CJ and Rodenburg C (2006). Site-specific dopant profiling in a scanning electron microscope using focused ion beam prepared specimens. Applied Physics Letters  vol. 88, (21) 10.1063/1.2207552
• Zhu D, Kappers MJ, Costa PMFJ, McAleese C, Rayment FDG, Chabrol GR, Graham DM, Dawson P, Thrush EJ, Mullins JT and Humphreys CJ (2006). A comparative study of near-UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers. Physica Status Solidi (a) Applications and Materials Science  vol. 203, (7) 1819-1823. 10.1002/pssa.200565250
• Jarjour AF, Green AM, Parker TJ, Taylor RA, Oliver RA, Andrew G, Kappers MJ, Humphreys CJ, Martin RW and Watson IM (2006). Two-photon absorption from single InGaN/GaN quantum dots. Physica E: Low-Dimensional Systems and Nanostructures  vol. 32, (1-2 SPEC. ISS.) 119-122. 10.1016/j.physe.2005.12.022
• Oliver RA, Kappers MJ, Sumner J, Datta R and Humphreys CJ (2006). Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3. Journal of Crystal Growth  vol. 289, (2) 506-514. 10.1016/j.jcrysgro.2005.12.075

2005

• Martinez CE, Stanton NM, Kent AJ, Graham DM, Dawson P, Kappers MJ and Humphreys CJ (2005). Determination of relative internal quantum efficiency in InGaNGaN quantum wells. Journal of Applied Physics  vol. 98, (5) 10.1063/1.2033144
• Robinson JW, Rice JH, Lee KH, Na JH, Taylor RA, Hasko DG, Oliver RA, Kappers MJ, Humphreys CJ and Briggs GAD (2005). Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field. Applied Physics Letters  vol. 86, (21) 1-3. 10.1063/1.1935044
• Graham DM, Soltani-Vala A, Dawson P, Godfrey MJ, Smeeton TM, Barnard JS, Kappers MJ, Humphreys CJ and Thrush EJ (2005). Optical and microstructural studies of InGaNGaN single-quantum-well structures. Journal of Applied Physics  vol. 97, (10) 10.1063/1.1897070
• Ofori AP, Rossouw CJ and Humphreys CJ (2005). Determining the site occupancy of Ru in the L12 phase of a Ni-base superalloy using ALCHEMI. Acta Materialia  vol. 53, (1) 97-110. 10.1016/j.actamat.2004.09.007
• Oliver RA, Kappers MJ, Humphreys CJ and Briggs GAD (2005). Growth modes in heteroepitaxy of InGaN on GaN. Journal of Applied Physics  vol. 97, (1) 10.1063/1.1823581

2004

• Chryssou CE, Kenyon AJ, Smeeton TM, Humphreys CJ and Hole DE (2004). Broadband sensitization of 1.53 μm Er³⁺ luminescence in erbium-implanted alumina. Applied Physics Letters  vol. 85, (22) 5200-5202. 10.1063/1.1829139
• Datta R, Kappers MJ, Barnard JS and Humphreys CJ (2004). Revealing all types of threading dislocations in GaN with improved contrast in a single plan view image. Applied Physics Letters  vol. 85, (16) 3411-3413. 10.1063/1.1807962
• Chen GS, Hsiao HH, Louh RF and Humphreys CJ (2004). Improving thermal stability of LiMn2O4 thin films by in situ coating of α-MnO2 using high-pressure and high-temperature sputtering. Electrochemical and Solid-State Letters  vol. 7, (8) 10.1149/1.1758931
• Rice JH, Robinson JW, Smith JD, Jarjour A, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ, Yasin S and Humphreys CJ (2004). Photoluminescence studies of exciton recombination and dephasing in single InGaN quantum dots. Ieee Transactions On Nanotechnology  vol. 3, (3) 343-347. 10.1109/TNANO.2004.828567
• Rice JH, Robinson JW, Jarjour A, Taylor RA, Oliver RA, Andrew G, Briggs D, Kappers MJ and Humphreys CJ (2004). Temporal variation in photoluminescence from single InGaN quantum dots. Applied Physics Letters  vol. 84, (20) 4110-4112. 10.1063/1.1753653
• Moldovan G, Harrison I, Humphreys CJ, Kappers M and Brown PD (2004). Application of the Taguchi method for assessment of surface treatment procedures for Ti/n-type GaN contacts. Materials Science and Technology  vol. 20, (4) 533-538. 10.1179/026708304225012008
• Kaestner B, Schönjahn C and Humphreys CJ (2004). Mapping the potential within a nanoscale undoped GaAs region using a scanning electron microscope. Applied Physics Letters  vol. 84, (12) 2109-2111. 10.1063/1.1689755
• Campbell LC, Wilkinson MJ, Manz A, Camilleri P and Humphreys CJ (2004). Electrophoretic manipulation of single DNA molecules in nanofabricated capillaries. Lab On a Chip  vol. 4, (3) 225-229. 10.1039/b312592k
• Humphreys C (2004). Can a Materials Scientist Move Mount Sinai? Mrs Bulletin  vol. 29, (4) 222-223. 10.1557/mrs2004.65

2003

• Smeeton TM, Kappers MJ, Barnard JS, Vickers ME and Humphreys CJ (2003). Electron-beam-induced strain within InGaN quantum wells: False indium cluster detection in the transmission electron microscope. Applied Physics Letters  vol. 83, (26) 5419-5421. 10.1063/1.1636534
• Belyaev AE, Foxon CT, Novikov SV, Makarovsky O, Eaves L, Kappers MJ and Humphreys CJ (2003). Comment on AIN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy [Appl. Phys. Lett. 81, 1729 (2002)]. Applied Physics Letters  vol. 83, (17) 3626-3627. 10.1063/1.1622987
• Robinson JW, Rice JH, Jarjour A, Smith JD, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ and Arakawa Y (2003). Time-resolved dynamics in single InGaN quantum dots. Applied Physics Letters  vol. 83, (13) 2674-2676. 10.1063/1.1614831
• Novikov SV, Zhao LX, Winser AJ, Kappers MJ, Barnard JS, Harrison I, Humphreys CJ and Foxon CT (2003). Blue emission from As-doped GaN films grown by molecular beam epitaxy on GaN templates. Journal of Crystal Growth  vol. 256, (3-4) 237-242. 10.1016/S0022-0248(03)01359-9
• Vickers ME, Kappers MJ, Smeeton TM, Thrush EJ, Barnard JS and Humphreys CJ (2003). Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering. Journal of Applied Physics  vol. 94, (3) 1565-1574. 10.1063/1.1587251
• Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ, Yasin S, Rice JH, Smith JD and Taylor RA (2003). InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal. Applied Physics Letters  vol. 83, (4) 755-757. 10.1063/1.1595716
• Schönjahn C, Broom RF, Humphreys CJ, Howie A and Mentink SAM (2003). Optimizing and quantifying dopant mapping using a scanning electron microscope with a through-the-lens detector. Applied Physics Letters  vol. 83, (2) 293-295. 10.1063/1.1592302
• Mavroidis C, Harris JJ, Kappers MJ, Humphreys CJ and Bougrioua Z (2003). Detailed interpretation of electron transport in n-GaN. Journal of Applied Physics  vol. 93, (11) 9095-9103. 10.1063/1.1571220
• Pope IA, Smowton PM, Blood P, Thomson JD, Kappers MJ and Humphreys CJ (2003). Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm. Applied Physics Letters  vol. 82, (17) 2755-2757. 10.1063/1.1570515

2002

• Schönjahn C, Humphreys CJ and Glick M (2002). Energy-filtered imaging in a field-emission scanning electron microscope for dopant mapping in semiconductors. Journal of Applied Physics  vol. 92, (12) 7667-7671. 10.1063/1.1525862
• Cho HK, Lee JY, Sharma N, Humphreys CJ, Yang GM, Kim CS, Song JH and Yu PW (2002). Response to comment on 'Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells' [Appl. Phys. Lett. 81, 3100 (2002)]. Applied Physics Letters  vol. 81, (16) 3102-3103. 10.1063/1.1515887
• Keast VJ, Scott AJ, Kappers MJ, Foxon CT and Humphreys CJ (2002). Electronic structure of GaN and InxGa1-xN measured with electron energy-loss spectroscopy. Physical Review B - Condensed Matter and Materials Physics  vol. 66, (12) 1253191-1253197. 10.1103/PhysRevB.66.125319
• Elliott SL, Broom RF and Humphreys CJ (2002). Dopant profiling with the scanning electron microscope - A study of Si. Journal of Applied Physics  vol. 91, (11) 9116-9122. 10.1063/1.1476968
• Chen GS, Lee PY, Boothroyd CB and Humphreys CJ (2002). Crystallization transformations in vacuum-deposited amorphous aluminum fluoride self-developing thin-film resists induced by electron-beam irradiation. Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films  vol. 20, (3) 986-990. 10.1116/1.1464842
• Kenyon AJ, Chryssou CE, Pitt CW, Shimizu-Iwayama T, Hole DE, Sharma N and Humphreys CJ (2002). Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms. Journal of Applied Physics  vol. 91, (1) 367-374. 10.1063/1.1419210
• Thomas SM and Humphreys C (2002). Colin Humphreys - A practical physicist having fun in the world of materials. Materials World  vol. 10, (1) 11-11.

2001

• Bright AN, Sharma N and Humphreys CJ (2001). Analysis of contacts and V-defects in GaN device structures by transmission electron microscopy. Journal of Electron Microscopy  vol. 50, (6) 489-495. 10.1093/jmicro/50.6.489
• Bright AN and Humphreys CJ (2001). Identification of interfacial layers in Ohmic contacts to n-type GaN and AlxGa1-xN/GaN heterostructures using high-resolution electron microscopy. Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties  vol. 81, (11) 1725-1744. 10.1080/13642810110079962
• Cho HK, Lee JY, Kim CS, Yang GM, Sharma N and Humphreys C (2001). Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition. Journal of Crystal Growth  vol. 231, (4) 466-473. 10.1016/S0022-0248(01)01522-6
• Cho HK, Lee JY, Sharma N, Humphreys CJ, Yang GM, Kim CS, Song JH and Yu PW (2001). Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells. Applied Physics Letters  vol. 79, (16) 2594-2596. 10.1063/1.1410362
• Sharma N, Tricker D, Thomas P, Bougrioua Z, Jacobs K, Cheyns J, Moerman I, Thrush T, Considine L, Boyd A and Humphreys C (2001). Chemical mapping of InGaN MQWs. Journal of Crystal Growth  vol. 230, (3-4) 438-441. 10.1016/S0022-0248(01)01252-0
• Mavroidis C, Harris JJ, Kappers MJ, Sharma N, Humphreys CJ and Thrush EJ (2001). Observation of thermally activated conduction at a GaN-sapphire interface. Applied Physics Letters  vol. 79, (8) 1121-1123. 10.1063/1.1395525
• Thomas MDR, Ahmed H, Sanderson KM, Shephard DS, Johnson BFG, Ozkaya D, Sharma N and Humphreys C (2001). Effects of electron-beam exposure on a ruthenium nanocluster polymer. Journal of Applied Physics  vol. 90, (2) 947-952. 10.1063/1.1379780
• Pankhurst DA, Botton GA and Humphreys CJ (2001). Local symmetry and bonding effects on electron energy-loss near-edge structures: Ab initio study of an NiAl grain boundary. Physical Review B - Condensed Matter and Materials Physics  vol. 63, (20) 10.1103/PhysRevB.63.205117
• Kenyon AJ, Chryssou CE, Pitt CW, Shimizu-Iwayama T, Hole DE, Sharma N and Humphreys CJ (2001). Broad-band and flashlamp pumping of 1.53 μm emission from erbium-doped silicon nanocrystals. Materials Science and Engineering B: Solid-State Materials For Advanced Technology  vol. 81, (1-3) 19-22. 10.1016/S0921-5107(00)00677-2
• Bright AN, Thomas PJ, Weyland M, Tricker DM, Humphreys CJ and Davies R (2001). Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy. Journal of Applied Physics  vol. 89, (6) 3143-3150. 10.1063/1.1347003
• Tatsuoka H, Koga T, Matsuda K, Nose Y, Souno Y, Kuwabara H, Brown PD and Humphreys CJ (2001). Microstructure of semiconducting MnSi1.7 and β-FeSi2 layers grown by surfactant-mediated reactive deposition epitaxy. Thin Solid Films  vol. 381, (2) 231-235. 10.1016/S0040-6090(00)01749-1
• Bright AN, Tricker DM, Humphreys CJ and Davies R (2001). A transmission electron microscopy study of microstructure evolution with increasing anneal temperature in Ti/Al ohmic contacts to n-GaN. Journal of Electronic Materials  vol. 30, (3) L13-L16. 10.1007/s11664-001-0030-2
• Bougrioua Z, Moerman I, Sharma N, Wallis RH, Cheyns J, Jacobs K, Thrush EJ, Considine L, Beanland R, Farvacque JL and Humphreys C (2001). Material optimisation for AlGaN/GaN HFET applications. Journal of Crystal Growth  vol. 230, (3-4) 573-578. 10.1016/S0022-0248(01)01303-3
• Sharma N, Cho HK, Lee JY and Humphreys CJ (2001). Chemical mapping of indium rich quantum dots in InGaN/GaN quantum wells. Materials Research Society Symposium - Proceedings  vol. 667, G671-G676. 10.1557/proc-667-g6.7

2000

• Saifullah MSM, Kurihara K and Humphreys CJ (2000). Comparative study of sputtered and spin-coatable aluminum oxide electron beam resists. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures  vol. 18, (6) 2737-2744. 10.1116/1.1323970
• Sharma N, Thomas P, Tricker D and Humphreys C (2000). Chemical mapping and formation of V-defects in InGaN multiple quantum wells. Applied Physics Letters  vol. 77, (9) 1274-1276. 10.1063/1.1289904
• Humphreys C (2000). Facing up to the future of materials science and technology. Materials World  vol. 8, (4) 11-13.
• Pekarskaya E, Botton GA, Jones CN and Humphreys CJ (2000). Effect of annealing on the microstructure and tensile properties of a β/γ′ Ni-Al-Fe alloy. Intermetallics  vol. 8, (8) 903-913. 10.1016/S0966-9795(00)00029-7
• Humphreys C (2000). Oxbridge and the public schools. Materials World  vol. 8, (1) 2-3.
• Botton GA, Nishino Y and Humphreys CJ (2000). Microstructural evolution and stability of (Fe1-xVx)3Al alloys in relation to the electronic structure. Intermetallics  vol. 8, (9-11) 1209-1214. 10.1016/S0966-9795(00)00043-1

1999

• Humphreys CJ, Botton GA, Pankhurst DA, Keast VJ and Temmerman WM (1999). Electronic structure, charge transfer and bonding in intermetallics using EELS and density functional theory. Materials Research Society Symposium - Proceedings  vol. 552,
• Pekarskaya E, Jones CN and Humphreys CJ (1999). Comparative study of the microstructure and tensile properties of Ni-Al alloys with Fe and Cr additions. Materials Research Society Symposium - Proceedings  vol. 552,
• Chen GS and Humphreys CJ (1999). Study of sample thickness dependence in electron-beam irradiation of self-developing inorganic materials. Journal of Applied Physics  vol. 85, (1) 148-152. 10.1063/1.369461
• Humphreys CJ (1999). Physical chemistry: Electrons seen in orbit. Nature  vol. 401, (6748) 21-22. 10.1038/43323
• Saifullah MSM, Botton GA, Boothroyd CB and Humphreys CJ (1999). Electron energy loss spectroscopy studies of the amorphous to crystalline transition in FeF3. Journal of Applied Physics  vol. 86, (5) 2499-2504. 10.1063/1.371083
• Humphreys CJ (1999). A two-phase charge-density real-space-pairing model of high-Tc superconductivity. Acta Crystallogr A  vol. 55, (Pt 2 Pt 1) 228-233. 10.1107/s0108767398014093
• Humphreys CJ (1999). A two-phase charge-density real-space-pairing model of high-Tc superconductivity. Acta Crystallographica Section a: Foundations of Crystallography  vol. 55, (2 PART I) 228-233. 10.1107/s0108767398014093
• Liu CP, Preston AR, Boothroyd CB and Humphreys CJ (1999). Quantitative analysis of ultrathin doping layers in semiconductors using high-angle annular dark field images. Journal of Microscopy  vol. 194, (1) 171-182. 10.1046/j.1365-2818.1999.00458.x
• Liu CP, Boothroyd CB and Humphreys CJ (1999). Energy-filtered transmission electron microscopy of multilayers in semiconductors. Journal of Microscopy  vol. 194, (1) 58-70. 10.1046/j.1365-2818.1999.00459.x
• Kaiser U, Khodos I, Brown PD, Chuvilin A, Albrecht M, Humphreys CJ, Fissel A and Richter W (1999). Transmission electron microscopy investigation of SiC films grown on SiC substrates by solid-source molecular beam epitaxy. Journal of Materials Research  vol. 14, (8) 3226-3236. 10.1557/jmr.1999.0436
• Walther T and Humphreys CJ (1999). A quantitative study of compositional profiles of chemical vapour-deposited strained silicon-germanium/silicon layers by transmission electron microscopy. Journal of Crystal Growth  vol. 197, (1-2) 113-128. 10.1016/S0022-0248(98)00930-0
• Yonenaga I, Lim SH, Shindo D, Brown PD and Humphreys CJ (1999). Structure and climb of faulted dipoles in GaAs. Physica Status Solidi (a) Applied Research  vol. 171, (1) 53-57. 10.1002/(SICI)1521-396X(199901)171:1<53::AID-PSSA53>3.0.CO;2-I
• Smith JP, Eccleston W, Brown PD and Humphreys CJ (1999). Electronic and structural properties of partially crystallized silicon produced by solid-phase crystallization of as-deposited amorphous silicon. Journal of The Electrochemical Society  vol. 146, (1) 306-312. 10.1149/1.1391605
• Kaiser U, Brown PD, Khodos I, Humphreys CJ, Schenk HPD and Richter W (1999). Effect of growth condition on the structure of 2H - AlN films deposited on Si(111) by plasma-assisted molecular beam epitaxy. Journal of Materials Research  vol. 14, (5) 2036-2042. 10.1557/JMR.1999.0275
• Weyher JL, Brown PD, Zauner ARA, Müller S, Boothroyd CB, Foord DT, Hageman PR, Humphreys CJ, Larsen PK, Grzegory I and Porowski S (1999). Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD). Journal of Crystal Growth  vol. 204, (4) 419-428. 10.1016/S0022-0248(99)00217-1

1998

• Humphreys C (1998). Stuff of dreams. New Scientist  vol. 157, (2126) 44-45.
• Matsuda K, Tatsuoka H, Matsunaga K, Isaji K, Kuwabara H, Brown PD, Xin Y, Dunin-Borkowski R and Humphreys CJ (1998). High-quality epitaxial MnSi(111) layers grown in the presence of an Sb flux. Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers  vol. 37, (12A) 6556-6561. 10.1143/JJAP.37.6556
• Ogawa H, Watanabe M, Ohsato H and Humphreys C (1998). Microwave dielectric properties of (Y2-xRx)BaCuO5 (R = rare-earth) solid solutions. Ieee International Symposium On Applications of Ferroelectrics  517-520.
• Yonenaga I, Brown PD and Humphreys CJ (1998). Climb of dislocations in GaAs by irradiation. Materials Science and Engineering A  vol. 253, (1-2) 148-150. 10.1016/s0921-5093(98)00723-0
• Humphreys C (1998). Shaping the future of materials science. Materials World  vol. 6, (6) 352-355.
• Tatsuoka H, Isaji K, Sugiura K, Kuwabara H, Brown PD, Xin Y and Humphreys CJ (1998). Interfacial reaction and defect microstructure of epitaxial MnSb/Si(111) grown by hot-wall epitaxy. Journal of Applied Physics  vol. 83, (10) 5504-5508. 10.1063/1.367410
• Dudarev SL, Botton GA, Savrasov SY, Humphreys CJ and Sutton AP (1998). Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study. Physical Review B  vol. 57, (3) 1505-1509. 10.1103/physrevb.57.1505
• Chen GS, Boothroyd CB and Humphreys CJ (1998). Electron-beam-induced damage in amorphous SiO2 and the direct fabrication of silicon nanostructures. Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties  vol. 78, (2) 491-506. 10.1080/01418619808241915
• Watanabe M, Ogawa H, Ohsato H and Humphreys C (1998). Microwave dielectric properties of Y2Ba(Cu1-xZnx)O5 solid solutions. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers  vol. 37, (9 PART B) 5360-5363. 10.1143/jjap.37.5360
• Matsuda K, Tatsuoka H, Matsunaga K, Isaji K, Kuwabara H, Brown PD, Xin Y, Dunin-Borkowski R and Humphreys CJ (1998). High-quality epitaxial MnSi(111) layers grown in the presence of an Sb flux. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers  vol. 37, (12) 6556-6561. 10.1143/jjap.37.6556
• Nishino Y, Inkson BJ, Ogawa T and Humphreys CJ (1998). Effect of molybdenum substitution on phase stability and high-temperature strength of Fe3Al alloys. Philosophical Magazine Letters  vol. 78, (2) 97-103. 10.1080/095008398178075
• Lim SH, Shindo D, Yonenaga I, Brown PD and Humphreys CJ (1998). Atomic arrangement of a Z-shape faulted dipole within deformed GaAs. Physical Review Letters  vol. 81, (24) 5350-5353. 10.1103/PhysRevLett.81.5350

1997

• Chen GS and Humphreys CJ (1997). Investigation of the proximity effect in amorphous AlF3 electron-beam resists. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures  vol. 15, (6) 1954-1960. 10.1116/1.589584
• Walther T, Humphreys CJ and Cullis AG (1997). Observation of vertical and lateral Ge segregation in thin undulating SiGe layers on Si by electron energy-loss spectroscopy. Applied Physics Letters  vol. 71, (6) 809-811. 10.1063/1.119653
• Botton GA and Humphreys CJ (1997). Analysis of EELS near edge structures to study the bonding character in intermetallic alloys. Micron  vol. 28, (4) 313-319. 10.1016/S0968-4328(97)00018-8
• Xin Y, Brown PD, Humphreys CJ, Cheng TS and Foxon CT (1997). Domain boundaries in epitaxial wurtzite GaN. Applied Physics Letters  vol. 70, (10) 1308-1310. 10.1063/1.118520
• Liu CP, Dunin-Borkowski RE, Boothroyd CB, Brown PD and Humphreys CJ (1997). Characterization of ultrathin doping layers in semiconductors. Microscopy and Microanalysis  vol. 3, (4) 352-363. 10.1017/s1431927697970276
• Xin Y, Brown PD, Dunin-Borkowski RE, Humphreys CJ, Cheng TS and Foxon CT (1997). Microstructural characterisation of GaN(As) films grown on (001) GaP by molecular beam epitaxy. Journal of Crystal Growth  vol. 171, (3-4) 321-332. 10.1016/S0022-0248(96)00663-X
• Botton GA, Burnell G, Humphreys CJ, Yadav T and Withers JC (1997). Microstructural and electron spectroscopic characterization of carbon nanostructures and nanotubes produced using multimetal catalysts. Journal of Physics and Chemistry of Solids  vol. 58, (7) 1091-1102. 10.1016/S0022-3697(97)00233-3
• Wiezorek JMK, Humphreys CJ and Fraser HL (1997). Determining directly from experiment the magnitude of the burgers vector of glissile 〈c〉-component dislocations in Ti3Al. Philosophical Magazine Letters  vol. 75, (5) 281-289. 10.1080/095008397179534

1996

• Brown PD and Humphreys CJ (1996). Scanning transmission electron beam induced conductivity investigation of a Si/Si1-xGex/Si heterostructure. Journal of Applied Physics  vol. 80, (4) 2527-2529. 10.1063/1.363038
• Harrowell RV (1996). Missed opportunities for high-temperature superconductivity. Physics World  vol. 9, (8) 15-15. 10.1088/2058-7058/9/8/14
• Botton GA, Guo GY, Temmerman WM and Humphreys CJ (1996). Experimental and theoretical study of the electronic structure of Fe, Co, and Ni aluminides with the B2 structure. Phys Rev B Condens Matter  vol. 54, (3) 1682-1691. 10.1103/physrevb.54.1682
• Chen GS, Boothroyd CB and Humphreys CJ (1996). Electron-beam induced crystallization transition in self-developing amorphous AIF3 resists. Applied Physics Letters  vol. 69, (2) 170-172. 10.1063/1.117361
• Moodie AF, Etheridge J and Humphreys CJ (1996). The symmetry of three-beam scattering equations: Inversion of three-beam diffraction patterns from centrosymmetric crystals. Acta Crystallographica Section a: Foundations of Crystallography  vol. 52, (4) 596-605. 10.1107/S0108767396001171
• Loginov YY, Brown PD and Humphreys CJ (1996). Effect of a doping impurity on the formation of structural defects in CdTe irradiated by electrons and ions. Physics of The Solid State  vol. 38, (4) 692-697.
• Loginov YY, Brown PD and Humphreys CJ (1996). Formation of structural defects in CdTe and CdZnTe heteroepitaxial layers grown on GaAs. Physics of The Solid State  vol. 38, (2) 272-277.
• Inkson BJ and Humphreys CJ (1996). High-resolution electron microscopy study of the junction between a coherent (111) and an incoherent (121) twin boundary in TiAl. Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties  vol. 73, (6) 1647-1661. 10.1080/01418619608243004
• Inkson BJ and Humphreys CJ (1996). Dislocations at 120° order interfaces in TiAl. Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties  vol. 73, (5) 1333-1345. 10.1080/01418619608245136
• Chen Q, Knowles KM, Humphreys CJ and Wu XF (1996). Atom positions in the R-phase unit cell in TiNi shape memory alloy. Journal of Materials Science  vol. 31, (16) 4227-4231. 10.1007/BF00356443
• Loginov YY, Brown PD and Humphreys CJ (1996). Defect Formation in ZnTe and (Cd,Zn)Te Epitaxial Layers Grown on (001) GaAs. Inorganic Materials  vol. 32, (1) 22-25.
• Cheng TS, Foxon CT, Jeffs NJ, Hughes OH, Ren BG, Xin Y, Brown PD, Humphreys CJ, Andranov AV, Lacklison DE, Orton JW and Halliwell M (1996). Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE method. Mrs Internet Journal of Nitride Semiconductor Research  vol. 1, 10.1557/s1092578300002040

1995

• Walther T, Humphreys CJ, Cullis AG and Robbins DJ (1995). Correlation between compositional fluctuations and surface undulations in strained layer epitaxy. Materials Science Forum  vol. 196-201, (pt 1) 505-510. 10.4028/www.scientific.net/msf.196-201.505
• Xin Y, Brown PD, Boothroyd CB, Humphreys CJ, Tatsuoka H, Kuwabara H, Oshita M, Nakamura T, Fujiyasu H and Nakanishi Y (1995). The microstructure of MnSb grown on (001) GaAs by hot wall epitaxy. Journal of Crystal Growth  vol. 156, (3) 155-162. 10.1016/0022-0248(95)00276-6
• Wiezorek JMK and Humphreys CJ (1995). On the hierarchy of planar fault energies in TiAl. Scripta Metallurgica Et Materiala  vol. 33, (3) 451-458. 10.1016/0956-716X(95)00212-E
• Xin Y, Zhou W and Humphreys CJ (1995). HREM studies of the (001) surface of YBa2Cu4O8. Physica C: Superconductivity and Its Applications  vol. 249, (3-4) 319-332. 10.1016/0921-4534(95)00327-4
• CAMPBELL J and HUMPHREYS C (1995). A FRAMEWORK FOR THE FUTURE. Materials World  vol. 3, (6) 286-287.
• Wiezorek JM, Court SA and Humphreys CJ (1995). On the dissociation of prism plane superdislocations in ti3al. Philosophical Magazine Letters  vol. 72, (6) 393-403. 10.1080/09500839508242479
• Walther T, Humphreys CJ, Grimshaw MP and Churchill AC (1995). Detection of random alloy fluctuations in high-resolution transmission electron micrographs of AlGaAs. Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties  vol. 72, (4) 1015-1030. 10.1080/01418619508239950
• Brown PD, Loginov YY, Stobbs WM and Humphreys CJ (1995). Microtwin nucleation and propagation in heteroepitaxial II-VI compounds on (001)-oriented GaAs substrates. Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties  vol. 72, (1) 39-57. 10.1080/01418619508239581
• Brown PD and Humphreys CJ (1995). Assessment of semiconductor epitaxial growth by transmission electron microscopy. Materials Science and Technology (United Kingdom)  vol. 11, (1) 54-65. 10.1179/mst.1995.11.1.54
• Inkson BJ, Boothroyd CB and Humphreys CJ (1995). Boride morphology in A (Fe, V, B) Ti-alloy containing B2-phase. Acta Metallurgica Et Materialia  vol. 43, (4) 1429-1438. 10.1016/0956-7151(94)00345-I
• Inkson BJ and Humphreys CJ (1995). High-resolution electron microscopy observation of a¹/2(112) superdislocation in Tial. Philosophical Magazine Letters  vol. 71, (6) 307-312. 10.1080/09500839508241012
• Saunders M, Bird DM, Zaluzec NJ, Burgess WG, Preston AR and Humphreys CJ (1995). Measurement of low-order structure factors for silicon from zone-axis CBED patterns. Ultramicroscopy  vol. 60, (2) 311-323. 10.1016/0304-3991(95)00058-1

1994

• Brown PD, Loginov YY, Mullins JT, Durose K, Brinkman AW and Humphreys CJ (1994). Transmission electron microscopy investigations of II-VI/GaAs heterostructures. Journal of Crystal Growth  vol. 138, (1-4) 538-544. 10.1016/0022-0248(94)90865-6
• Wiezorek JMK, Preston AR, Court SA, Fraser HL and Humphreys CJ (1994). Burgers vector determination of decorated dislocations in γ-TiAl by diffraction contrast and large-angle convergent-beam electron diffraction. Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties  vol. 69, (2) 285-299. 10.1080/01418619408244344
• WHITE RS and HUMPHREYS CJ (1994). Famines and cataclysmic volcanism. Geology Today  vol. 10, (5) 181-185. 10.1111/j.1365-2451.1994.tb00421.x
• Burgess WG, Preston AR, Botton GA, Zaluzec NJ and Humphreys CJ (1994). Benefits of energy filtering for advanced convergent beam electron diffraction patterns. Ultramicroscopy  vol. 55, (3) 276-283. 10.1016/0304-3991(94)90062-0

1993

• Chen GS, Boothroyd CB and Humphreys CJ (1993). Novel fabrication method for nanometer-scale silicon dots and wires. Applied Physics Letters  vol. 62, (16) 1949-1951. 10.1063/1.109500
• Inkson BJ, Boothroyd CB and Humphreys CJ (1993). Microstructure of A γ-α2-β TiAl alloy containing iron and vanadium. Acta Metallurgica Et Materialia  vol. 41, (10) 2867-2876. 10.1016/0956-7151(93)90101-W
• White RS and Humphreys C (1993). Evolution and religion [3]. Nature  vol. 366, (6453) 10.1038/366296c0

1992

• MORGAN C, CHEN GS, BOOTHROYD C, BAILEY S and HUMPHREYS C (1992). ULTIMATE LIMITS OF LITHOGRAPHY. Physics World  vol. 5, (11) 28-32.

1991

• HUMPHREYS CJ (1991). THE STAR OF BETHLEHEM - A COMET IN 5 BC - AND THE DATE OF THE BIRTH OF CHRIST. Quarterly Journal of The Royal Astronomical Society  vol. 32, (4) 389-407.
• Humphreys CJ, Maher DM, Eaglesham DJ, Kvam EP and Salisbury IG (1991). The origin of dislocations in multilayers. Journal De Physique III  vol. 1, (6) 1119-1130. 10.1051/jp3:1991175
• Humphreys C (1991). State of British science [1]. Nature  vol. 351, (6327) 10.1038/351513a0
• Humphreys C (1991). 100 keV electron beam damage of metals and oxides. Micron and Microscopica Acta  vol. 22, (1-2) 147-148. 10.1016/0739-6260(91)90133-K

1990

• Zhang JG, McCartney DG and Humphreys CJ (1990). On the microstructural evolution of sintered Bi-Sr-Ca-Cu-O high-T c superconductors. Superconductor Science and Technology  vol. 3, (4) 185-190. 10.1088/0953-2048/3/4/006
• Turner PS, Bullough TJ, Devenish RW, Maherj DM and Humphreys CJ (1990). Nanometre hole formation in Mgo using electron beams. Philosophical Magazine Letters  vol. 61, (4) 181-193. 10.1080/09500839008202357
• Humphreys C and Waddington WG (1990). Crucifixion date [8]. Nature  vol. 348, (6303) 10.1038/348684a0
• Kvam EP, Maher DM and Humphreys CJ (1990). Variation of dislocation morphology with strain in GexSi1−x epilayers on (100)Si. Journal of Materials Research  vol. 5, (9) 1900-1907. 10.1557/JMR.1990.1900

1989

• Eaglesham DJ, Maher DM, Fraser HL, Humphreys CJ and Bean JC (1989). Tetragonal and monoclinic forms of GexSi1-x epitaxial layers. Applied Physics Letters  vol. 54, (3) 222-224. 10.1063/1.101015
• Devenish RW, Eaglesham DJ, Maher DM and Humphreys CJ (1989). Nanolithography using field emission and conventional thermionic electron sources. Ultramicroscopy  vol. 28, (1-4) 324-329. 10.1016/0304-3991(89)90318-5
• Humphreys CJ (1989). Radiation effects. Ultramicroscopy  vol. 28, (1-4) 357-358. 10.1016/0304-3991(89)90325-2
• Eaglesham DJ, Maher DM, Kvam EP, Bean JC and Humphreys CJ (1989). New Source of Dislocations in GexSi1-x/Si(100) Strained Epitaxial Layers. Physical Review Letters  vol. 62, (2) 187-190. 10.1103/PhysRevLett.62.187
• Humphreys C (1989). Controlling crystal growth. Nature  vol. 341, (6244) 10.1038/341689a0
• Eaglesham DJ, Kvam EP, Maher DM, Humphreys CJ and Bean JC (1989). Dislocation nucleation near the critical thickness in GeSi/Si strained layers. Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties  vol. 59, (5) 1059-1073. 10.1080/01418618908209837
• Humphreys C (1989). Materials science and engineering in Britain. Advanced Materials  vol. 1, (8-9) 249-250. 10.1002/adma.19890010802
• Humphreys C (1989). Materials Science and Engineering in Britain. Angewandte Chemie International Edition in English  vol. 28, (8) 1077-1078. 10.1002/anie.198910771

1988

• Eaglesham DJ, Kvam EP, Maher DM, Humphreys CJ, Green GS, Tanner BK and Bean JC (1988). X-ray topography of the coherency breakdown in GexSi 1-x/Si(100). Applied Physics Letters  vol. 53, (21) 2083-2085. 10.1063/1.100288
• Humphreys CJ, Eaglesham DJ, Maher DM and Fraser HL (1988). CBED and CBIM from semiconductors and superconductors. Ultramicroscopy  vol. 26, (1-2) 13-23. 10.1016/0304-3991(88)90371-3
• Eaglesham DJ, Humphreys CJ, Alford NMN, Clegg WJ, Harmer MA and Birchall JD (1988). High temperature superconducting ceramics. Materials Science and Engineering B  vol. 1, (3-4) 229-235. 10.1016/0921-5107(88)90003-7
• Huxford NP, Eaglesham DJ and Humphreys CJ (1988). Erratum: Limits on quantitative information from high-resolution electron microscopy of YBa2Cu3O7superconductors (Nature (1987) 329, (812-813)). Nature  vol. 331, (6153) 10.1038/331286b0
• Humphreys CJ, Maher DM, Fraser HL and Eaglesham DJ (1988). Convergent-beam imaging—a transmission electron microscopy technique for investigating small localized distortions in crystals. Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties  vol. 58, (5) 787-798. 10.1080/01418618808209953
• Braunstein P, Devenish R, Gallezot P, Heaton BT, Humphreys CJ, Kervennal J, Mulley S and Ries M (1988). Silica‐Supported FePd Bimetallic Particles: Formation from Mixed‐Metal Clusters and Catalytic Activity. Angewandte Chemie International Edition in English  vol. 27, (7) 927-929. 10.1002/anie.198809271

1987

• Heaton BT, Ingallina P, Devenish R, Humphreys CJ, Ceriotti A, Longoni G and Marchionna M (1987). Analytical electron microscopy of [Ni38Pt6(CO) 48H]^5-. Journal of The Chemical Society, Chemical Communications  (10) 765-766. 10.1039/C39870000765
• Eaglesham DJ, Humphreys CJ, Alford NM, Clegg WJ, Harmer MA and Birchall JD (1987). New phases in the superconducting Y:Ba:Cu:O system. Applied Physics Letters  vol. 51, (6) 457-459. 10.1063/1.98421
• Maher DM, Fraser HL, Humphreys CJ, Knoell RV and Bean JC (1987). Detection and measurement of local distortions in a semiconductor layered structure by convergent-beam electron diffraction. Applied Physics Letters  vol. 50, (10) 574-576. 10.1063/1.98139
• Berger SD, Salisbury IG, Milne RH, Imeson D and Humphreys CJ (1987). Electron energy-loss spectroscopy studies of nanometre-scale structures in alumina produced by intense electron-beam irradiation. Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties  vol. 55, (3) 341-358. 10.1080/13642818708208619
• Waddington WG, Rez P, Grant IP and Humphreys CJ (1987). Erratum: White lines in the L2,3 electron-energy-loss and x-ray absorption spectra of 3d transition metals (Physical Review B (1986) 34, (1467)). Physical Review B  vol. 35, (10) 10.1103/PhysRevB.35.5297
• Eaglesham DJ, Humphreys CJ, Clegg WJ, Harmer MA, AIford NMN and Birchall JD (1987). THE ORTHORHOMBIC AND TETRAGONAL PHASES OF Y1Ba2Cu3O9‐y. Advanced Ceramic Materials  vol. 2, (3 B) 662-667. 10.1111/j.1551-2916.1987.tb00132.x
• Huxford NP, Eaglesham DJ and Humphreys CJ (1987). Limits on quantitative information from high-resolution electron microscopy of YBa2Cu3O7 superconductors. Nature  vol. 329, (6142) 812-813. 10.1038/329812a0

1986

• Bullock JF, Titchmarsh JM and Humphreys CJ (1986). STEM/EDX MICOANALYSIS OF COMPOSITIONAL FLUCTUATIONS IN SEMICONDUCTOR MULTI-QUANTUM-WELL STRUCTURES. Semiconductor Science and Technology  vol. 1, (6) 342-345.
• Bullock JF, Titchmarsh JM and Humphreys CJ (1986). STEM/EDX microanalysis of compositional fluctuations in semiconductor multi-quantum-well structures. Semiconductor Science and Technology  vol. 1, (6) 343-345. 10.1088/0268-1242/1/6/001
• Waddington WG, Rez P, Grant IP and Humphreys CJ (1986). White lines in the L2,3 electron-energy-loss and x-ray absorption spectra of 3d transition metals. Physical Review B  vol. 34, (3) 1467-1473. 10.1103/PhysRevB.34.1467

1985

• Davies RA, Kelly MJ, Kerr TM, Hetherington CJD and Humphreys CJ (1985). Geometric and electronic structure of a semiconductor superlattice. Nature  vol. 317, (6036) 418-419. 10.1038/317418a0
• Timsit RS, Waddington WG, Humphreys CJ and Hutchison JL (1985). Structure of the Al/Al2O3 interface. Applied Physics Letters  vol. 46, (9) 830-832. 10.1063/1.95899
• Humphreys CJ (1985). Surface physics: Hopping atoms in crystal growth. Nature  vol. 317, (6032) 10.1038/317016a0
• Timsit RS, Waddington WG, Humphreys CJ and Hutchison JL (1985). Examination of the Al/Al2O3 interface by high-resolution electron microscopy. Ultramicroscopy  vol. 18, (1-4) 387-394. 10.1016/0304-3991(85)90157-3

1984

• Humphreys CJ (1984). Crytallography: Defects in reduced oxides. Nature  vol. 309, (5966) 10.1038/309310a0
• Humphreys CJ (1984). MICRO-84: Electron microscopy 50 years on. Nature  vol. 311, (5981) 10.1038/311012a0
• Salisbury IG, Timsit RS, Berger SD and Humphreys CJ (1984). Nanometer scale electron beam lithography in inorganic materials. Applied Physics Letters  vol. 45, (12) 1289-1291. 10.1063/1.95115
• Cherns D, Hetherington CJD and Humphreys CJ (1984). The atomic structure of the NiSi2-(001)Si interface. Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties  vol. 49, (1) 165-177. 10.1080/01418618408233436
• Spence JCH and Humphreys CJ (1984). CHANNELLING RADIATION IN ELECTRON MICROSCOPY. Optik (Jena)  vol. 66, (3) 225-242.

1983

• Humphreys CJ and Waddington WG (1983). Dating the crucifixion. Nature  vol. 306, (5945) 743-746. 10.1038/306743a0
• Mochel ME, Humphreys CJ, Eades JA, Mochel JM and Petford AM (1983). Electron beam writing on a 20-Å scale in metal β-aluminas. Applied Physics Letters  vol. 42, (4) 392-394. 10.1063/1.93918
• Hull R, Smith DJ and Humphreys CJ (1983). A high‐resolution electron microscopic study of defects in sodium β′″‐alumina. Journal of Microscopy  vol. 130, (2) 203-214. 10.1111/j.1365-2818.1983.tb04218.x
• Hull R, Petford A, Humphreys C and Smith D (1983). High resolution electron microscopy of silver β- and β″ -aluminas. Solid State Ionics  vol. 9-10, (PART 1) 181-186. 10.1016/0167-2738(83)90231-X

1981

• Humphreys CJ (1981). Fundamental concepts of stem imaging. Ultramicroscopy  vol. 7, (1) 7-12. 10.1016/0304-3991(81)90017-6
• Humphreys CJ and Spence JCH (1981). RESOLUTION AND ILLUMINATION COHERENCE IN ELECTRON MICROSCOPY. Optik (Jena)  vol. 58, (2) 125-142.

1980

• Sellar JR, Imeson D and Humphreys CJ (1980). The combined convergent beam/critical voltage technique in high voltage electron microscopy. Micron (1969)  vol. 11, (3-4) 241-242. 10.1016/0047-7206(80)90004-7
• Spencer JP and Humphreys CJ (1980). A multiple scattering transport theory for electron. Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties  vol. 42, (4) 433-451. 10.1080/01418618008239368

1979

• Humphreys CJ (1979). The scattering of fast electrons by crystals. Reports On Progress in Physics  vol. 42, (11) 1825-1887. 10.1088/0034-4885/42/11/002

1977

• Rez P, Humphreys CJ and Whelan MJ (1977). The distribution of intensity in electron diifraction patterns due to phonon scattering. Philosophical Magazine  vol. 35, (1) 81-96. 10.1080/14786437708235974
• Humphreys CJ, Drummond RA, Hart-Davis A and Butler EP (1977). Additional image peaks in the high resolution imaging of dislocations. Philosophical Magazine  vol. 35, (6) 1543-1555. 10.1080/14786437708232977

1974

• Rolf Sandström , Spencer JF and Humphreys CJ (1974). A theoretical model for the energy dependence of electron channelling patterns in scanning electron microscopy. Journal of Physics D: Applied Physics  vol. 7, (7) 1030-1046. 10.1088/0022-3727/7/7/310

1973

• Humphreys CJ, Spencer JP, Woolf RJ, Joy DC, Titchmarsh JM, Booker GR, Strojnik A, STickler R, Howell PGT, Boyde A, Brandis EK, Johari O and DeNee PB (1973). SCANNING ELECTRON MICROSCOPY/1972. PROC I: 5TH ANNUAL SCANNING ELECTRON MICROSCOPE SYMPOSIUM, APR 1972; II: WORKSHOP ON BIOLOGICAL SPECIMEN PREPARATION FOR SCANNING ELECTRON MICROSCOPY, APR 1972.

1972

• Lally JS, Humphreys CJ, Metherell AJF and Fisher RM (1972). The critical voltage effect in high voltage electron microscopy. Philosophical Magazine  vol. 25, (2) 321-343. 10.1080/14786437208226808
• Humphreys CJ (1972). The optimum voltage in very high voltage electron microscopy. Philosophical Magazine  vol. 25, (6) 1459-1472. 10.1080/14786437208223865
• Spencer JP, Humphreys CJ and Hirsch PB (1972). A dynamical theory for the contrast of perfect and imperfect crystals in the scanning electron microscope using backscattered electrons. Philosophical Magazine  vol. 26, (1) 193-213. 10.1080/14786437208221029

1971

• Humphreys CJ, Thomas LE, Lally JS and Fisher RM (1971). Maximizing the penetration in high voltage electron microscopy. Philosophical Magazine  vol. 23, (181) 87-114. 10.1080/14786437108216366

1970

• Humphreys CJ and Lally JS (1970). Aspects of Bloch-wave channeling in high-voltage electron microscopy. Journal of Applied Physics  vol. 41, (1) 232-235. 10.1063/1.1658326
• Tanner BK and Humphreys CJ (1970). High resolution divergent-beam X-ray topography. Journal of Physics D: Applied Physics  vol. 3, (7) 1144-1146. 10.1088/0022-3727/3/7/421
• Thomas LE and Humphreys CJ (1970). Kikuchi patterns in a high voltage electron microscope. Physica Status Solidi (a)  vol. 3, (3) 599-615. 10.1002/pssa.19700030306
• Thomas LE, Humphreys CJ, Duff WR and Grubb DT (1970). RADIATION DAMAGE OF POLYMERS IN THE MILLION VOLT ELECTRON MICROSCOPE. Radiation Effects  vol. 3, (1-2) 89-91. 10.1080/00337577008235620

1969

• Humphreys CJ and Whelan MJ (1969). Inelastic scattering of fast electrons by crystals. Philosophical Magazine  vol. 20, (163) 165-172. 10.1080/14786436908228543

1968

• Humphreys CJ and Hirsch PB (1968). Absorption parameters in electron diffraction theory. Philosophical Magazine  vol. 18, (151) 115-122. 10.1080/14786436808227313

1967

• Humphreys CJ, Howie A and Booker GR (1967). Some electron diffraction contrast effects at planar defects in crystals. Philosophical Magazine  vol. 15, (135) 507-522. 10.1080/14786436708220898

Grants of specific relevance to Materials Research

Grants

• Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs
  Kuball M, Humphreys CJ, Thayne IG, Williams OA, Tasker PJ, Oliver RA, Wallis DJ, Ding YL, Elgaid K and May PW
  £4,325,358 Engineering and Physical Sciences Research Council (01-01-2017 - 31-12-2021)
  Abstract
• Replacing Indium Tin Oxide (ITO) with next-generation graphene in electronic devices (GRAPHIC)
  Humphreys CJ
  £149,841 Technology Strategy Board (01-01-2019 - 30-06-2020)
  Abstract

• Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates
  Humphreys CJ and Oliver RA
  £434,930 Engineering and Physical Sciences Research Council (30-04-2016 - 29-04-2020)
  Abstract
• Beyond Blue: New Horizons in Nitrides (Platform Grant Renewal)
  Oliver RA and Humphreys CJ
  £979,287 Engineering and Physical Sciences Research Council (29-01-2015 - 28-12-2020)
  Abstract